A highly reliable gate/n- overlapped transistor for mega-bit DRAMs

M. Nagatomo, Y. Okumura, K. Mitsui, I. Ogoh, H. Genjoh, M. Inuishi, T. Matsukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A noble gate/N- overlapped Tr. fabricated using oblique rotating ion implantation technique was developed. It is confirmed that this Tr. meets high performance M bit DRAMs' requirements, that is, high drain current, enough punchthrough voltage and low substrate current. The mechanism of this Tr.'s action is analyzed by simulation and is concluded that peak position of electric field is located far from the drain current pass in this Tr.'s structure. The maximum electric field is also relaxed by formation of N- layer using oblique ion implantation.

Original languageEnglish
Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
EditorsHeiner Ryssel, Anton Heuberger, Peter Lange
PublisherIEEE Computer Society
Pages923-926
Number of pages4
ISBN (Electronic)0387510001
ISBN (Print)9780387510002
Publication statusPublished - 1989 Jan 1
Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
Duration: 1989 Sep 111989 Sep 14

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other19th European Solid State Device Research Conference, ESSDERC 1989
CountryGermany
CityBerlin
Period89/9/1189/9/14

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Nagatomo, M., Okumura, Y., Mitsui, K., Ogoh, I., Genjoh, H., Inuishi, M., & Matsukawa, T. (1989). A highly reliable gate/n- overlapped transistor for mega-bit DRAMs. In H. Ryssel, A. Heuberger, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 923-926). [5437066] (European Solid-State Device Research Conference). IEEE Computer Society.