A kinetic equation for thermal oxidation of silicon replacing the Deal-Grove equation

Takanobu Watanabe, Iwao Ohdomari

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    A formulated kinetic theory for thermal oxidation of silicon is presented in detail. The theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the Si O2 Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is the opposite conclusion to the Deal-Grove theory.

    Original languageEnglish
    JournalJournal of the Electrochemical Society
    Issue number12
    Publication statusPublished - 2007


    ASJC Scopus subject areas

    • Electrochemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

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