A kinetic equation for thermal oxidation of silicon replacing the Deal-Grove equation

Takanobu Watanabe, Iwao Ohdomari

    Research output: Contribution to journalArticle

    10 Citations (Scopus)

    Abstract

    A formulated kinetic theory for thermal oxidation of silicon is presented in detail. The theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the Si O2 Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is the opposite conclusion to the Deal-Grove theory.

    Original languageEnglish
    JournalJournal of the Electrochemical Society
    Volume154
    Issue number12
    DOIs
    Publication statusPublished - 2007

    Fingerprint

    Silicon
    kinetic equations
    Oxidation
    oxidation
    Kinetics
    silicon
    Kinetic theory
    transition layers
    kinetic theory
    Oxides
    diffusivity
    deviation
    oxides
    Hot Temperature

    ASJC Scopus subject areas

    • Electrochemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    A kinetic equation for thermal oxidation of silicon replacing the Deal-Grove equation. / Watanabe, Takanobu; Ohdomari, Iwao.

    In: Journal of the Electrochemical Society, Vol. 154, No. 12, 2007.

    Research output: Contribution to journalArticle

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