A kinetic study of chemical vapor deposition of AlN/TiN composite film

Yi Jun Liu, Toshio Ohsawa, Yasuyuki Egashira, Hiroshi Komiyama, Hee Joon Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Understanding the deposition mechanism of a multi-component material by chemical vapor deposition (CVD) will provide an essential guide for design of CVD reactor. Especially, it will play an important role in the control of uniformity of film thickness and composition. In this study, A1N/TiN nano-structured composite films were synthesized by atmospheric-pressure chemical vapor deposition (APCVD), using aluminum chloride (AlCl4), titanium chloride (TiC14) and ammonia (NH3) as reactant gases at 1123 K in a horizontal tubular reactor. A kinetic study indicated a mechanism that two kinds of growth species were synthesized independently from AlCl4/NH3 and TiCl4/NH3 system, respectively, and there is no interaction between the aluminum and titanium system in the gas phase. Each single-component growth rate was governed by the diffusion of its growth species from the gas phase to the substrate. Considering 1) that the growth species of TiN is synthesized faster than that of AIN, and 2) that the diffusion coefficient of TiN growth species is larger than that of AIN, we proposed that a rotating disk type is a suitable reactor for this CVD system.

Original languageEnglish
Pages (from-to)1429-1434
Number of pages6
JournalKagaku Kogaku Ronbunshu
Volume22
Issue number6
DOIs
Publication statusPublished - 1996
Externally publishedYes

Fingerprint

Composite films
Chemical vapor deposition
Kinetics
Gases
Titanium
Aluminum chloride
Rotating disks
Aluminum
Ammonia
Atmospheric pressure
Film thickness
Chlorides
Substrates
Chemical analysis

Keywords

  • AlN/TiN composite film
  • APCVD
  • Deposition mechanism
  • Diffusion coefficient
  • Growth species

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

A kinetic study of chemical vapor deposition of AlN/TiN composite film. / Liu, Yi Jun; Ohsawa, Toshio; Egashira, Yasuyuki; Komiyama, Hiroshi; Kim, Hee Joon.

In: Kagaku Kogaku Ronbunshu, Vol. 22, No. 6, 1996, p. 1429-1434.

Research output: Contribution to journalArticle

Liu, Yi Jun ; Ohsawa, Toshio ; Egashira, Yasuyuki ; Komiyama, Hiroshi ; Kim, Hee Joon. / A kinetic study of chemical vapor deposition of AlN/TiN composite film. In: Kagaku Kogaku Ronbunshu. 1996 ; Vol. 22, No. 6. pp. 1429-1434.
@article{9b23ee7895234ffa8114a69c1ed16863,
title = "A kinetic study of chemical vapor deposition of AlN/TiN composite film",
abstract = "Understanding the deposition mechanism of a multi-component material by chemical vapor deposition (CVD) will provide an essential guide for design of CVD reactor. Especially, it will play an important role in the control of uniformity of film thickness and composition. In this study, A1N/TiN nano-structured composite films were synthesized by atmospheric-pressure chemical vapor deposition (APCVD), using aluminum chloride (AlCl4), titanium chloride (TiC14) and ammonia (NH3) as reactant gases at 1123 K in a horizontal tubular reactor. A kinetic study indicated a mechanism that two kinds of growth species were synthesized independently from AlCl4/NH3 and TiCl4/NH3 system, respectively, and there is no interaction between the aluminum and titanium system in the gas phase. Each single-component growth rate was governed by the diffusion of its growth species from the gas phase to the substrate. Considering 1) that the growth species of TiN is synthesized faster than that of AIN, and 2) that the diffusion coefficient of TiN growth species is larger than that of AIN, we proposed that a rotating disk type is a suitable reactor for this CVD system.",
keywords = "AlN/TiN composite film, APCVD, Deposition mechanism, Diffusion coefficient, Growth species",
author = "Liu, {Yi Jun} and Toshio Ohsawa and Yasuyuki Egashira and Hiroshi Komiyama and Kim, {Hee Joon}",
year = "1996",
doi = "10.1252/kakoronbunshu.22.1429",
language = "English",
volume = "22",
pages = "1429--1434",
journal = "Kagaku Kogaku Ronbunshu",
issn = "0386-216X",
publisher = "Society of Chemical Engineers, Japan",
number = "6",

}

TY - JOUR

T1 - A kinetic study of chemical vapor deposition of AlN/TiN composite film

AU - Liu, Yi Jun

AU - Ohsawa, Toshio

AU - Egashira, Yasuyuki

AU - Komiyama, Hiroshi

AU - Kim, Hee Joon

PY - 1996

Y1 - 1996

N2 - Understanding the deposition mechanism of a multi-component material by chemical vapor deposition (CVD) will provide an essential guide for design of CVD reactor. Especially, it will play an important role in the control of uniformity of film thickness and composition. In this study, A1N/TiN nano-structured composite films were synthesized by atmospheric-pressure chemical vapor deposition (APCVD), using aluminum chloride (AlCl4), titanium chloride (TiC14) and ammonia (NH3) as reactant gases at 1123 K in a horizontal tubular reactor. A kinetic study indicated a mechanism that two kinds of growth species were synthesized independently from AlCl4/NH3 and TiCl4/NH3 system, respectively, and there is no interaction between the aluminum and titanium system in the gas phase. Each single-component growth rate was governed by the diffusion of its growth species from the gas phase to the substrate. Considering 1) that the growth species of TiN is synthesized faster than that of AIN, and 2) that the diffusion coefficient of TiN growth species is larger than that of AIN, we proposed that a rotating disk type is a suitable reactor for this CVD system.

AB - Understanding the deposition mechanism of a multi-component material by chemical vapor deposition (CVD) will provide an essential guide for design of CVD reactor. Especially, it will play an important role in the control of uniformity of film thickness and composition. In this study, A1N/TiN nano-structured composite films were synthesized by atmospheric-pressure chemical vapor deposition (APCVD), using aluminum chloride (AlCl4), titanium chloride (TiC14) and ammonia (NH3) as reactant gases at 1123 K in a horizontal tubular reactor. A kinetic study indicated a mechanism that two kinds of growth species were synthesized independently from AlCl4/NH3 and TiCl4/NH3 system, respectively, and there is no interaction between the aluminum and titanium system in the gas phase. Each single-component growth rate was governed by the diffusion of its growth species from the gas phase to the substrate. Considering 1) that the growth species of TiN is synthesized faster than that of AIN, and 2) that the diffusion coefficient of TiN growth species is larger than that of AIN, we proposed that a rotating disk type is a suitable reactor for this CVD system.

KW - AlN/TiN composite film

KW - APCVD

KW - Deposition mechanism

KW - Diffusion coefficient

KW - Growth species

UR - http://www.scopus.com/inward/record.url?scp=0346555082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346555082&partnerID=8YFLogxK

U2 - 10.1252/kakoronbunshu.22.1429

DO - 10.1252/kakoronbunshu.22.1429

M3 - Article

AN - SCOPUS:0346555082

VL - 22

SP - 1429

EP - 1434

JO - Kagaku Kogaku Ronbunshu

JF - Kagaku Kogaku Ronbunshu

SN - 0386-216X

IS - 6

ER -