A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor

Etsuji Ogawa, Kei Masunishi, Tamio Ikehashi, Tomohiro Saito, Hiroaki Yamazaki, Yasushi Tomizawa, Yoshiaki Sugizaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Actuators used in RF-MEMS tunable capacitors have an issue of creep-induced deformation. The creep is caused by a ductile-metal beam which is indispensable to attain the low loss. To avoid this issue, we previously reported an actuator structure that uses a brittle material, silicon nitride (SiN), at the stress-concentrated spring portions [1]. The present paper aims to clarify a long-term creep immunity of the actuator. We first determined parameters of Norton's law by measurements and then carried out Finite Element Method (FEM) simulations. As a result, we found that the shift of the up-state capacitance is 2.2% after keeping the actuator in down-state position for 3 years at 85°C.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages2466-2469
Number of pages4
DOIs
Publication statusPublished - 2011 Sep 1
Externally publishedYes
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 2011 Jun 52011 Jun 9

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
CountryChina
CityBeijing
Period11/6/511/6/9

Fingerprint

Reliability analysis
MEMS
Creep
Capacitors
Actuators
Brittleness
Silicon nitride
Capacitance
Finite element method
Metals

Keywords

  • brittle material
  • creep
  • electrostatic actuator
  • Norton's law
  • RF-MEMS
  • tunable capacitor

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ogawa, E., Masunishi, K., Ikehashi, T., Saito, T., Yamazaki, H., Tomizawa, Y., & Sugizaki, Y. (2011). A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 2466-2469). [5969693] (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969693

A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor. / Ogawa, Etsuji; Masunishi, Kei; Ikehashi, Tamio; Saito, Tomohiro; Yamazaki, Hiroaki; Tomizawa, Yasushi; Sugizaki, Yoshiaki.

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2466-2469 5969693 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ogawa, E, Masunishi, K, Ikehashi, T, Saito, T, Yamazaki, H, Tomizawa, Y & Sugizaki, Y 2011, A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969693, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, pp. 2466-2469, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 11/6/5. https://doi.org/10.1109/TRANSDUCERS.2011.5969693
Ogawa E, Masunishi K, Ikehashi T, Saito T, Yamazaki H, Tomizawa Y et al. A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2466-2469. 5969693. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969693
Ogawa, Etsuji ; Masunishi, Kei ; Ikehashi, Tamio ; Saito, Tomohiro ; Yamazaki, Hiroaki ; Tomizawa, Yasushi ; Sugizaki, Yoshiaki. / A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. pp. 2466-2469 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).
@inproceedings{52c1943f6ca44878b286d447e5f2b406,
title = "A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor",
abstract = "Actuators used in RF-MEMS tunable capacitors have an issue of creep-induced deformation. The creep is caused by a ductile-metal beam which is indispensable to attain the low loss. To avoid this issue, we previously reported an actuator structure that uses a brittle material, silicon nitride (SiN), at the stress-concentrated spring portions [1]. The present paper aims to clarify a long-term creep immunity of the actuator. We first determined parameters of Norton's law by measurements and then carried out Finite Element Method (FEM) simulations. As a result, we found that the shift of the up-state capacitance is 2.2{\%} after keeping the actuator in down-state position for 3 years at 85°C.",
keywords = "brittle material, creep, electrostatic actuator, Norton's law, RF-MEMS, tunable capacitor",
author = "Etsuji Ogawa and Kei Masunishi and Tamio Ikehashi and Tomohiro Saito and Hiroaki Yamazaki and Yasushi Tomizawa and Yoshiaki Sugizaki",
year = "2011",
month = "9",
day = "1",
doi = "10.1109/TRANSDUCERS.2011.5969693",
language = "English",
isbn = "9781457701573",
series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",
pages = "2466--2469",
booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

}

TY - GEN

T1 - A long-term reliability analysis of a creep-immune RF-MEMS tunable capacitor

AU - Ogawa, Etsuji

AU - Masunishi, Kei

AU - Ikehashi, Tamio

AU - Saito, Tomohiro

AU - Yamazaki, Hiroaki

AU - Tomizawa, Yasushi

AU - Sugizaki, Yoshiaki

PY - 2011/9/1

Y1 - 2011/9/1

N2 - Actuators used in RF-MEMS tunable capacitors have an issue of creep-induced deformation. The creep is caused by a ductile-metal beam which is indispensable to attain the low loss. To avoid this issue, we previously reported an actuator structure that uses a brittle material, silicon nitride (SiN), at the stress-concentrated spring portions [1]. The present paper aims to clarify a long-term creep immunity of the actuator. We first determined parameters of Norton's law by measurements and then carried out Finite Element Method (FEM) simulations. As a result, we found that the shift of the up-state capacitance is 2.2% after keeping the actuator in down-state position for 3 years at 85°C.

AB - Actuators used in RF-MEMS tunable capacitors have an issue of creep-induced deformation. The creep is caused by a ductile-metal beam which is indispensable to attain the low loss. To avoid this issue, we previously reported an actuator structure that uses a brittle material, silicon nitride (SiN), at the stress-concentrated spring portions [1]. The present paper aims to clarify a long-term creep immunity of the actuator. We first determined parameters of Norton's law by measurements and then carried out Finite Element Method (FEM) simulations. As a result, we found that the shift of the up-state capacitance is 2.2% after keeping the actuator in down-state position for 3 years at 85°C.

KW - brittle material

KW - creep

KW - electrostatic actuator

KW - Norton's law

KW - RF-MEMS

KW - tunable capacitor

UR - http://www.scopus.com/inward/record.url?scp=80052128447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052128447&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2011.5969693

DO - 10.1109/TRANSDUCERS.2011.5969693

M3 - Conference contribution

SN - 9781457701573

T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

SP - 2466

EP - 2469

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

ER -