A low breakdown-voltage charge pump based on Cockcroft-Walton structure

Renyuan Zhang, Zhangcai Huang, Yasuaki Inoue

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    10 Citations (Scopus)

    Abstract

    A Cockcroft-Walton type charge pump circuit is proposed in this paper. Compared with Dickson type, each transistor and capacitor in the proposed circuit just stand against the voltage less than one Vdd, so that a low break-down voltage process can be applied to this kind of charge pump to reduce the chip area cost and break-down risk. By using the proposed structure, the performances of voltage boosting efficiency and power efficiency can reach 98.9% and 87%.

    Original languageEnglish
    Title of host publicationASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC
    Pages328-331
    Number of pages4
    DOIs
    Publication statusPublished - 2009
    Event2009 8th IEEE International Conference on ASIC, ASICON 2009 - Changsha
    Duration: 2009 Oct 202009 Oct 23

    Other

    Other2009 8th IEEE International Conference on ASIC, ASICON 2009
    CityChangsha
    Period09/10/2009/10/23

    Keywords

    • Boosting efficiency
    • Breakdown voltage
    • Cockcroft-Walton type
    • Power efficiency

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

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  • Cite this

    Zhang, R., Huang, Z., & Inoue, Y. (2009). A low breakdown-voltage charge pump based on Cockcroft-Walton structure. In ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC (pp. 328-331). [5351433] https://doi.org/10.1109/ASICON.2009.5351433