A low-power sub-1-V low-voltage reference using body effect

Jun Pan, Yasuaki Inoue, Zheng Liang, Zhangcai Huang, Weilun Huang

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).

    Original languageEnglish
    Pages (from-to)748-755
    Number of pages8
    JournalIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
    VolumeE90-A
    Issue number4
    DOIs
    Publication statusPublished - 2007 Apr

    Fingerprint

    Low Voltage
    Voltage
    Electric potential
    MOSFET
    Temperature Dependence
    Threshold voltage
    Temperature
    Biased
    Dissipation
    Energy dissipation
    Electronics
    Coefficient
    Simulation

    Keywords

    • Back-gate
    • Body effect
    • CMOS
    • Low-power
    • Low-voltage
    • Reference
    • Temperature coefficient

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Hardware and Architecture
    • Information Systems

    Cite this

    A low-power sub-1-V low-voltage reference using body effect. / Pan, Jun; Inoue, Yasuaki; Liang, Zheng; Huang, Zhangcai; Huang, Weilun.

    In: IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, Vol. E90-A, No. 4, 04.2007, p. 748-755.

    Research output: Contribution to journalArticle

    Pan, Jun ; Inoue, Yasuaki ; Liang, Zheng ; Huang, Zhangcai ; Huang, Weilun. / A low-power sub-1-V low-voltage reference using body effect. In: IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. 2007 ; Vol. E90-A, No. 4. pp. 748-755.
    @article{93923bb6bd794cb88ad77368b2e83614,
    title = "A low-power sub-1-V low-voltage reference using body effect",
    abstract = "A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).",
    keywords = "Back-gate, Body effect, CMOS, Low-power, Low-voltage, Reference, Temperature coefficient",
    author = "Jun Pan and Yasuaki Inoue and Zheng Liang and Zhangcai Huang and Weilun Huang",
    year = "2007",
    month = "4",
    doi = "10.1093/ietfec/e90-a.4.748",
    language = "English",
    volume = "E90-A",
    pages = "748--755",
    journal = "IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences",
    issn = "0916-8508",
    publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",
    number = "4",

    }

    TY - JOUR

    T1 - A low-power sub-1-V low-voltage reference using body effect

    AU - Pan, Jun

    AU - Inoue, Yasuaki

    AU - Liang, Zheng

    AU - Huang, Zhangcai

    AU - Huang, Weilun

    PY - 2007/4

    Y1 - 2007/4

    N2 - A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).

    AB - A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).

    KW - Back-gate

    KW - Body effect

    KW - CMOS

    KW - Low-power

    KW - Low-voltage

    KW - Reference

    KW - Temperature coefficient

    UR - http://www.scopus.com/inward/record.url?scp=34247097859&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=34247097859&partnerID=8YFLogxK

    U2 - 10.1093/ietfec/e90-a.4.748

    DO - 10.1093/ietfec/e90-a.4.748

    M3 - Article

    AN - SCOPUS:34247097859

    VL - E90-A

    SP - 748

    EP - 755

    JO - IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

    JF - IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

    SN - 0916-8508

    IS - 4

    ER -