A low-power sub-1-V low-voltage reference using body effect

Jun Pan; Yasuaki Inoue; Zheng Liang; Zhangcai Huang; Weilun Huang

doi:10.1093/ietfec/e90-a.4.748

A low-power sub-1-V low-voltage reference using body effect

Jun Pan^*, Yasuaki Inoue, Zheng Liang, Zhangcai Huang, Weilun Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).

Original language	English
Pages (from-to)	748-755
Number of pages	8
Journal	IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Volume	E90-A
Issue number	4
DOIs	https://doi.org/10.1093/ietfec/e90-a.4.748
Publication status	Published - 2007 Apr

Keywords

Back-gate
Body effect
CMOS
Low-power
Low-voltage
Reference
Temperature coefficient

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture
Information Systems

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10.1093/ietfec/e90-a.4.748

Cite this

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title = "A low-power sub-1-V low-voltage reference using body effect",

abstract = "A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).",

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author = "Jun Pan and Yasuaki Inoue and Zheng Liang and Zhangcai Huang and Weilun Huang",

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T1 - A low-power sub-1-V low-voltage reference using body effect

AU - Pan, Jun

AU - Inoue, Yasuaki

AU - Liang, Zheng

AU - Huang, Zhangcai

AU - Huang, Weilun

PY - 2007/4

Y1 - 2007/4

N2 - A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).

AB - A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).

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KW - Body effect

KW - CMOS

KW - Low-power

KW - Low-voltage

KW - Reference

KW - Temperature coefficient

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A low-power sub-1-V low-voltage reference using body effect

Abstract

Keywords

ASJC Scopus subject areas

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