A Metal Bump Bonding Method Using Ag Nanoparticles as Intermediate Layer

Weixin Fu, Masatsugu Nimura, Takashi Kasahara, Hayata Mimatsu, Akiko Okada, Shuichi Shoji, Shugo Ishizuka, Jun Mizuno

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The future development of low-temperature and low-pressure bonding technology is necessary for fine-pitch bump application. We propose a bump structure using Ag nanoparticles as an intermediate layer coated on a fine-pitch Cu pillar bump. The intermediate layer is prepared using an efficient and cost-saving squeegee-coating method followed by a 100°C baking process. This bump structure can be easily flattened before the bonding process, and the low-temperature sinterability of the nanoparticles is retained. The bonding experiment was successfully performed at 250°C and 39.8 MPa and the bonding strength was comparable to that achieved via other bonding technology utilizing metal particles or porous material as bump materials.

Original languageEnglish
Pages (from-to)4646-4652
Number of pages7
JournalJournal of Electronic Materials
Volume44
Issue number11
DOIs
Publication statusPublished - 2015 Jul 22

Keywords

  • Ag nanoparticle
  • fine-pitch bump
  • Flip-chip bonding
  • low-pressure bonding
  • low-temperature bonding
  • metal bump bonding
  • sintering bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

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