A method for measuring in-plane unidirectional electrical properties in a wide band-gap semiconductor using a Brillouin scattering method

Takahiko Yanagitani, Hiroyuki Sano, Mami Matsukawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

It is difficult to measure the in-plane directional electrical properties of a crystal sample without physical contact. This paper describes the measurement of in-plane unidirectional resistivity through electromechanical coupling. The degree of coupling was determined from acoustic velocity data measured using the Brillouin scattering method. The resistivity distribution in a ZnO crystal with a resistivity of less than 1 Ω m, (common in intrinsic wide band-gap semiconductors) was clearly detected through acoustic velocity at gigahertz frequencies. The resistivity values obtained from the acoustic wave velocities showed a good correlation with standard contact electrode measurements in the resistivity range of 0.03-1 Ω m. This noncontact measurement technique should be useful for measuring the microscopic distribution of in-plane resistivity in wide band-gap semiconductors, and is a powerful tool for experiments under extreme conditions, such as high pressure and/or high temperature.

Original languageEnglish
Article number024910
JournalJournal of Applied Physics
Volume108
Issue number2
DOIs
Publication statusPublished - 2010 Jul 15
Externally publishedYes

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electrical properties
broadband
electrical resistivity
scattering
acoustic velocity
crystals
electrodes
acoustics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

A method for measuring in-plane unidirectional electrical properties in a wide band-gap semiconductor using a Brillouin scattering method. / Yanagitani, Takahiko; Sano, Hiroyuki; Matsukawa, Mami.

In: Journal of Applied Physics, Vol. 108, No. 2, 024910, 15.07.2010.

Research output: Contribution to journalArticle

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