A method for predicting thickness of the unoriented layer in ZnO film using piezoelectricity distribution in depth direction

S. Takayanagi, Takahiko Yanagitani, M. Matsukawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The crystalline orientation of thin films gradually improves as the growth proceeds. Especially in the non-epitaxial growth, its initial layer is often unoriented. Because the unoriented layer degrades the performance of the device, the degree of crystalline orientation in depth direction is a very important issue. We propose a non-destructive method for predicting the thickness of the unoriented layer, making use of piezoelectricity distribution of films. An electromechanical resonator consisting of the single highly oriented layer excites a fundamental mode, but does not excite a second-overtone mode. The unoriented layer, on the other hand, exhibits little piezoelectric effect. A bilayer resonator consisting of the highly oriented layer on the unoriented layer excites a second-overtone mode because of the deference of piezoelectricity in these layers. In this study, the electromechanical resonance characteristics of Cu/ZnO(0 0 0 1)/Ti(0 0 0 1)/SiO2, Cu/ZnO(0 0 0 1)/AZO(0 0 0 1)/Ti(0 0 0 1)/SiO2 and Cu/ZnO(112̄0) /Al/SiO 2 were experimentally observed. These results were compared with the theoretical estimations by a mechanical transmission line model to determine the thicknesses of the piezoelectrically inactive layers in the (0 0 0 1) or(112̄0) oriented ZnO films. The inactive layer thickness in(112̄0) the oriented ZnO film was in good agreement with the unoriented layer thickness observed by the cross-sectional transmission electron microscopy and electron diffraction.

Original languageEnglish
Article number315305
JournalJournal of Physics D: Applied Physics
Volume46
Issue number31
DOIs
Publication statusPublished - 2013 Aug 7
Externally publishedYes

Fingerprint

piezoelectricity
Piezoelectricity
Crystal orientation
Resonators
Crystalline materials
Electron diffraction
Electric lines
Transmission electron microscopy
Thin films
Direction compound
resonators
harmonics
transmission lines
electron diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

A method for predicting thickness of the unoriented layer in ZnO film using piezoelectricity distribution in depth direction. / Takayanagi, S.; Yanagitani, Takahiko; Matsukawa, M.

In: Journal of Physics D: Applied Physics, Vol. 46, No. 31, 315305, 07.08.2013.

Research output: Contribution to journalArticle

@article{d8f028ab949d403695c6604ab13e7318,
title = "A method for predicting thickness of the unoriented layer in ZnO film using piezoelectricity distribution in depth direction",
abstract = "The crystalline orientation of thin films gradually improves as the growth proceeds. Especially in the non-epitaxial growth, its initial layer is often unoriented. Because the unoriented layer degrades the performance of the device, the degree of crystalline orientation in depth direction is a very important issue. We propose a non-destructive method for predicting the thickness of the unoriented layer, making use of piezoelectricity distribution of films. An electromechanical resonator consisting of the single highly oriented layer excites a fundamental mode, but does not excite a second-overtone mode. The unoriented layer, on the other hand, exhibits little piezoelectric effect. A bilayer resonator consisting of the highly oriented layer on the unoriented layer excites a second-overtone mode because of the deference of piezoelectricity in these layers. In this study, the electromechanical resonance characteristics of Cu/ZnO(0 0 0 1)/Ti(0 0 0 1)/SiO2, Cu/ZnO(0 0 0 1)/AZO(0 0 0 1)/Ti(0 0 0 1)/SiO2 and Cu/ZnO(112̄0) /Al/SiO 2 were experimentally observed. These results were compared with the theoretical estimations by a mechanical transmission line model to determine the thicknesses of the piezoelectrically inactive layers in the (0 0 0 1) or(112̄0) oriented ZnO films. The inactive layer thickness in(112̄0) the oriented ZnO film was in good agreement with the unoriented layer thickness observed by the cross-sectional transmission electron microscopy and electron diffraction.",
author = "S. Takayanagi and Takahiko Yanagitani and M. Matsukawa",
year = "2013",
month = "8",
day = "7",
doi = "10.1088/0022-3727/46/31/315305",
language = "English",
volume = "46",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "31",

}

TY - JOUR

T1 - A method for predicting thickness of the unoriented layer in ZnO film using piezoelectricity distribution in depth direction

AU - Takayanagi, S.

AU - Yanagitani, Takahiko

AU - Matsukawa, M.

PY - 2013/8/7

Y1 - 2013/8/7

N2 - The crystalline orientation of thin films gradually improves as the growth proceeds. Especially in the non-epitaxial growth, its initial layer is often unoriented. Because the unoriented layer degrades the performance of the device, the degree of crystalline orientation in depth direction is a very important issue. We propose a non-destructive method for predicting the thickness of the unoriented layer, making use of piezoelectricity distribution of films. An electromechanical resonator consisting of the single highly oriented layer excites a fundamental mode, but does not excite a second-overtone mode. The unoriented layer, on the other hand, exhibits little piezoelectric effect. A bilayer resonator consisting of the highly oriented layer on the unoriented layer excites a second-overtone mode because of the deference of piezoelectricity in these layers. In this study, the electromechanical resonance characteristics of Cu/ZnO(0 0 0 1)/Ti(0 0 0 1)/SiO2, Cu/ZnO(0 0 0 1)/AZO(0 0 0 1)/Ti(0 0 0 1)/SiO2 and Cu/ZnO(112̄0) /Al/SiO 2 were experimentally observed. These results were compared with the theoretical estimations by a mechanical transmission line model to determine the thicknesses of the piezoelectrically inactive layers in the (0 0 0 1) or(112̄0) oriented ZnO films. The inactive layer thickness in(112̄0) the oriented ZnO film was in good agreement with the unoriented layer thickness observed by the cross-sectional transmission electron microscopy and electron diffraction.

AB - The crystalline orientation of thin films gradually improves as the growth proceeds. Especially in the non-epitaxial growth, its initial layer is often unoriented. Because the unoriented layer degrades the performance of the device, the degree of crystalline orientation in depth direction is a very important issue. We propose a non-destructive method for predicting the thickness of the unoriented layer, making use of piezoelectricity distribution of films. An electromechanical resonator consisting of the single highly oriented layer excites a fundamental mode, but does not excite a second-overtone mode. The unoriented layer, on the other hand, exhibits little piezoelectric effect. A bilayer resonator consisting of the highly oriented layer on the unoriented layer excites a second-overtone mode because of the deference of piezoelectricity in these layers. In this study, the electromechanical resonance characteristics of Cu/ZnO(0 0 0 1)/Ti(0 0 0 1)/SiO2, Cu/ZnO(0 0 0 1)/AZO(0 0 0 1)/Ti(0 0 0 1)/SiO2 and Cu/ZnO(112̄0) /Al/SiO 2 were experimentally observed. These results were compared with the theoretical estimations by a mechanical transmission line model to determine the thicknesses of the piezoelectrically inactive layers in the (0 0 0 1) or(112̄0) oriented ZnO films. The inactive layer thickness in(112̄0) the oriented ZnO film was in good agreement with the unoriented layer thickness observed by the cross-sectional transmission electron microscopy and electron diffraction.

UR - http://www.scopus.com/inward/record.url?scp=84880352409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880352409&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/46/31/315305

DO - 10.1088/0022-3727/46/31/315305

M3 - Article

AN - SCOPUS:84880352409

VL - 46

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 31

M1 - 315305

ER -