A method of fabricating bump-less interconnects applicable to wafer-scale flip-chip bonding

Yasuhiro Yamaji; Tokihiko Yokoshima; Noboru Igawa; Katsuya Kikuchi; Hiroshi Nakagawa; Masahiro Aoyagi

doi:10.1109/EPTC.2008.4763508

A method of fabricating bump-less interconnects applicable to wafer-scale flip-chip bonding

Yasuhiro Yamaji^*, Tokihiko Yokoshima, Noboru Igawa, Katsuya Kikuchi, Hiroshi Nakagawa, Masahiro Aoyagi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A chemical flip-chip bonding method by electroless plating process has been developed. This method positively utilizes so-called "bridge" phenomenon between metal pads in electroless Ni-B plating, and enables bump-less interconnect without loading and/or heating at lower temperature (60°C). The interconnect behavior was examined using test chips and substrates with various pad-to-pad configurations. The result confirmed that effective pad width and a ratio of pad pitch to pad width determine the completeness of the interconnection under the condition that distance between facing pads are sufficiently close. A potential of improved method was also demonstrated for fabricating finer pitch flip-chip interconnect with a minimum pad-pitch of 20 μm.

Original language	English
Title of host publication	10th Electronics Packaging Technology Conference, EPTC 2008
Pages	657-662
Number of pages	6
DOIs	https://doi.org/10.1109/EPTC.2008.4763508
Publication status	Published - 2008 Dec 1
Externally published	Yes
Event	10th Electronics Packaging Technology Conference, EPTC 2008 - Singapore, Singapore Duration: 2008 Dec 9 → 2008 Dec 12

Publication series

Name	10th Electronics Packaging Technology Conference, EPTC 2008

Conference

Conference	10th Electronics Packaging Technology Conference, EPTC 2008
Country/Territory	Singapore
City	Singapore
Period	08/12/9 → 08/12/12

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EPTC.2008.4763508

Cite this

Yamaji, Y., Yokoshima, T., Igawa, N., Kikuchi, K., Nakagawa, H., & Aoyagi, M. (2008). A method of fabricating bump-less interconnects applicable to wafer-scale flip-chip bonding. In 10th Electronics Packaging Technology Conference, EPTC 2008 (pp. 657-662). [4763508] (10th Electronics Packaging Technology Conference, EPTC 2008). https://doi.org/10.1109/EPTC.2008.4763508

A method of fabricating bump-less interconnects applicable to wafer-scale flip-chip bonding. / Yamaji, Yasuhiro; Yokoshima, Tokihiko; Igawa, Noboru et al.

10th Electronics Packaging Technology Conference, EPTC 2008. 2008. p. 657-662 4763508 (10th Electronics Packaging Technology Conference, EPTC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamaji, Y, Yokoshima, T, Igawa, N, Kikuchi, K, Nakagawa, H & Aoyagi, M 2008, A method of fabricating bump-less interconnects applicable to wafer-scale flip-chip bonding. in 10th Electronics Packaging Technology Conference, EPTC 2008., 4763508, 10th Electronics Packaging Technology Conference, EPTC 2008, pp. 657-662, 10th Electronics Packaging Technology Conference, EPTC 2008, Singapore, Singapore, 08/12/9. https://doi.org/10.1109/EPTC.2008.4763508

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AU - Nakagawa, Hiroshi

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AB - A chemical flip-chip bonding method by electroless plating process has been developed. This method positively utilizes so-called "bridge" phenomenon between metal pads in electroless Ni-B plating, and enables bump-less interconnect without loading and/or heating at lower temperature (60°C). The interconnect behavior was examined using test chips and substrates with various pad-to-pad configurations. The result confirmed that effective pad width and a ratio of pad pitch to pad width determine the completeness of the interconnection under the condition that distance between facing pads are sufficiently close. A potential of improved method was also demonstrated for fabricating finer pitch flip-chip interconnect with a minimum pad-pitch of 20 μm.

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A method of fabricating bump-less interconnects applicable to wafer-scale flip-chip bonding

Abstract

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ASJC Scopus subject areas

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