A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI

Hao Zhang, Mengshu Huang, Yimeng Zhang, Xutao Li, Tsutomu Yoshihara

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Combining switched-capacitor technology with body effect in MOSFETs, a nano-power CMOS voltage reference is implemented in 0.18 μm standard CMOS technology. The low output breaking threshold restriction is produced without using any component subdivision, such that chip area is saved. Measurements show that the output voltage is about 123.3 mV, temperature coefficient is about 17.6 ppm/°C, and line sensitivity is 0.15 %/V. The supply current is less than 90 nA when the supply voltage is 1 V. The area occupation is about 0.03 mm2.

    Original languageEnglish
    Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
    DOIs
    Publication statusPublished - 2013
    Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong
    Duration: 2013 Jun 32013 Jun 5

    Other

    Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
    CityHong Kong
    Period13/6/313/6/5

    Fingerprint

    Capacitors
    Electric potential
    Temperature

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

    Cite this

    Zhang, H., Huang, M., Zhang, Y., Li, X., & Yoshihara, T. (2013). A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628130] https://doi.org/10.1109/EDSSC.2013.6628130

    A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI. / Zhang, Hao; Huang, Mengshu; Zhang, Yimeng; Li, Xutao; Yoshihara, Tsutomu.

    2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628130.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Zhang, H, Huang, M, Zhang, Y, Li, X & Yoshihara, T 2013, A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628130, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, 13/6/3. https://doi.org/10.1109/EDSSC.2013.6628130
    Zhang H, Huang M, Zhang Y, Li X, Yoshihara T. A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628130 https://doi.org/10.1109/EDSSC.2013.6628130
    Zhang, Hao ; Huang, Mengshu ; Zhang, Yimeng ; Li, Xutao ; Yoshihara, Tsutomu. / A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI. 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013.
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