TY - JOUR
T1 - A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate
AU - Makimoto, T.
AU - Kumakura, K.
AU - Maeda, M.
AU - Yamamoto, H.
AU - Horikoshi, Y.
N1 - Funding Information:
This paper is a part of the outcome of research performed under a Waseda University Grant for Special Research Projects (Project number 2014B-305 ).
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/7/28
Y1 - 2015/7/28
N2 - A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.
AB - A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.
KW - A3. Molecular beam epitaxy
KW - B1. AlON
KW - B1. Nitrides
KW - B1. Sapphire
KW - B2. AlN
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/j.jcrysgro.2015.02.104
DO - 10.1016/j.jcrysgro.2015.02.104
M3 - Article
AN - SCOPUS:84937866515
VL - 425
SP - 138
EP - 140
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -