Abstract
A 20 nm-thick AlON buffer layer consisting of Al<inf>2</inf>O<inf>3</inf>, graded AlON, AlN, and thin Al<inf>2</inf>O<inf>3</inf> amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.
Original language | English |
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Pages (from-to) | 138-140 |
Number of pages | 3 |
Journal | Journal of Crystal Growth |
Volume | 425 |
DOIs | |
Publication status | Published - 2015 Jul 28 |
Keywords
- A3. Molecular beam epitaxy
- B1. AlON
- B1. Nitrides
- B1. Sapphire
- B2. AlN
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry