A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Toshiki Makimoto, K. Kumakura, M. Maeda, H. Yamamoto, Y. Horikoshi

    Research output: Contribution to journal › Article

    2 Citations (Scopus)

    Abstract

    A 20 nm-thick AlON buffer layer consisting of Al<inf>2</inf>O<inf>3</inf>, graded AlON, AlN, and thin Al<inf>2</inf>O<inf>3</inf> amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.

    Original languageEnglish
    Pages (from-to)138-140
    Number of pages3
    JournalJournal of Crystal Growth
    Volume425
    DOIs
    Publication statusPublished - 2015 Jul 28

    Fingerprint

    Aluminum Oxide
    Buffer layers
    Molecular beam epitaxy
    Sapphire
    sapphire
    buffers
    Substrates
    Amorphous films
    Mirrors
    Nitrogen
    Plasmas
    Thin films
    radio frequencies
    molecular beam epitaxy
    mirrors
    nitrogen
    Temperature

    Keywords

    • A3. Molecular beam epitaxy
    • B1. AlON
    • B1. Nitrides
    • B1. Sapphire
    • B2. AlN
    • B2. Semiconducting III-V materials

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Materials Chemistry
    • Inorganic Chemistry

    Cite this

    A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate. / Makimoto, Toshiki; Kumakura, K.; Maeda, M.; Yamamoto, H.; Horikoshi, Y.

    In: Journal of Crystal Growth, Vol. 425, 28.07.2015, p. 138-140.

    Research output: Contribution to journal › Article

    Makimoto, T, Kumakura, K, Maeda, M, Yamamoto, H & Horikoshi, Y 2015, 'A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate', Journal of Crystal Growth, vol. 425, pp. 138-140. https://doi.org/10.1016/j.jcrysgro.2015.02.104
    Makimoto T, Kumakura K, Maeda M, Yamamoto H, Horikoshi Y. A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate. Journal of Crystal Growth. 2015 Jul 28;425:138-140. https://doi.org/10.1016/j.jcrysgro.2015.02.104
    Makimoto, Toshiki ; Kumakura, K. ; Maeda, M. ; Yamamoto, H. ; Horikoshi, Y. / A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate. In: Journal of Crystal Growth. 2015 ; Vol. 425. pp. 138-140.
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    abstract = "A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.",
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    AU - Kumakura, K.

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    AU - Horikoshi, Y.

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