Abstract
A 20 nm-thick AlON buffer layer consisting of Al<inf>2</inf>O<inf>3</inf>, graded AlON, AlN, and thin Al<inf>2</inf>O<inf>3</inf> amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.
| Original language | English |
|---|---|
| Pages (from-to) | 138-140 |
| Number of pages | 3 |
| Journal | Journal of Crystal Growth |
| Volume | 425 |
| DOIs | |
| Publication status | Published - 2015 Jul 28 |
Keywords
- A3. Molecular beam epitaxy
- B1. AlON
- B1. Nitrides
- B1. Sapphire
- B2. AlN
- B2. Semiconducting III-V materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
Fingerprint Dive into the research topics of 'A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate'. Together they form a unique fingerprint.
Cite this
Makimoto, T., Kumakura, K., Maeda, M., Yamamoto, H., & Horikoshi, Y. (2015). A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate. Journal of Crystal Growth, 425, 138-140. https://doi.org/10.1016/j.jcrysgro.2015.02.104