A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Toshiki Makimoto, K. Kumakura, M. Maeda, H. Yamamoto, Y. Horikoshi

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)


    A 20 nm-thick AlON buffer layer consisting of Al<inf>2</inf>O<inf>3</inf>, graded AlON, AlN, and thin Al<inf>2</inf>O<inf>3</inf> amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.

    Original languageEnglish
    Pages (from-to)138-140
    Number of pages3
    JournalJournal of Crystal Growth
    Publication statusPublished - 2015 Jul 28


    • A3. Molecular beam epitaxy
    • B1. AlON
    • B1. Nitrides
    • B1. Sapphire
    • B2. AlN
    • B2. Semiconducting III-V materials

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Materials Chemistry
    • Inorganic Chemistry

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