A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Toshiki Makimoto; K. Kumakura; M. Maeda; H. Yamamoto; Y. Horikoshi

doi:10.1016/j.jcrysgro.2015.02.104

A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

Toshiki Makimoto, K. Kumakura, M. Maeda, H. Yamamoto, Y. Horikoshi

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A 20 nm-thick AlON buffer layer consisting of Al<inf>2</inf>O<inf>3</inf>, graded AlON, AlN, and thin Al<inf>2</inf>O<inf>3</inf> amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.

Original language	English
Pages (from-to)	138-140
Number of pages	3
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.104
Publication status	Published - 2015 Jul 28

Keywords

A3. Molecular beam epitaxy
B1. AlON
B1. Nitrides
B1. Sapphire
B2. AlN
B2. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry

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title = "A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate",

abstract = "A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.",

keywords = "A3. Molecular beam epitaxy, B1. AlON, B1. Nitrides, B1. Sapphire, B2. AlN, B2. Semiconducting III-V materials",

author = "Toshiki Makimoto and K. Kumakura and M. Maeda and H. Yamamoto and Y. Horikoshi",

year = "2015",

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language = "English",

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journal = "Journal of Crystal Growth",

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T1 - A new AlON buffer layer for RF-MBE growth of AlN on a sapphire substrate

AU - Makimoto, Toshiki

AU - Kumakura, K.

AU - Maeda, M.

AU - Yamamoto, H.

AU - Horikoshi, Y.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.

AB - A 20 nm-thick AlON buffer layer consisting of Al2O3, graded AlON, AlN, and thin Al2O3 amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radio frequency plasma for nitrogen source (RF-MBE). Mirror-smooth AlN layers were successfully obtained using this new AlON buffer layer. The total threading dislocation densities of AlN layers are comparable to those reported for the high-quality AlN layers grown by RF-MBE using the conventional low-temperature (LT) buffer layer.

KW - A3. Molecular beam epitaxy

KW - B1. AlON

KW - B1. Nitrides

KW - B1. Sapphire

KW - B2. AlN

KW - B2. Semiconducting III-V materials

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