A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt

Kazuma Maeda, Kouji Yasuda, Toshiyuki Nohira, Rika Hagiwara, Takayuki Homma

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    8 Citations (Scopus)

    Abstract

    Toward the establishment of a new electrodeposition process of Si, the optimum conditions for obtaining adherent, compact and smooth Si film in molten KF-KCl-K 2SiF 6 were investigated. Galvanostatic electrolysis was conducted on an Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10- 500 mA cm -2) and K 2SiF 6 concentrations (0.50-5.0 mol%) at 923 K. Cross-sectional SEM observation of the deposits revealed that compact and smooth Si films form at intermediate K 2SiF 6 concentration and current density. The morphology of the Si deposit changed into nodular at higher current density. At lower current density, detachment of Si layer from the Ag substrate occurred during the water washing. The relationship between the deposition conditions and Si morphology is discussed from the view point of electrodeposition mechanism.

    Original languageEnglish
    Title of host publicationECS Transactions
    PublisherElectrochemical Society Inc.
    Pages285-291
    Number of pages7
    Volume64
    Edition4
    DOIs
    Publication statusPublished - 2014
    Event19th International Symposium on Molten Salts and Ionic Liquids, MS and IL 2014 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
    Duration: 2014 Oct 52014 Oct 9

    Other

    Other19th International Symposium on Molten Salts and Ionic Liquids, MS and IL 2014 - 2014 ECS and SMEQ Joint International Meeting
    CountryMexico
    CityCancun
    Period14/10/514/10/9

    Fingerprint

    Electrodeposition
    Molten materials
    Current density
    Salts
    Crystalline materials
    Silicon
    Water
    Deposits
    Substrates
    Electrolysis
    Washing
    Eutectics
    Scanning electron microscopy

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Maeda, K., Yasuda, K., Nohira, T., Hagiwara, R., & Homma, T. (2014). A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt. In ECS Transactions (4 ed., Vol. 64, pp. 285-291). Electrochemical Society Inc.. https://doi.org/10.1149/06404.0285ecst

    A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt. / Maeda, Kazuma; Yasuda, Kouji; Nohira, Toshiyuki; Hagiwara, Rika; Homma, Takayuki.

    ECS Transactions. Vol. 64 4. ed. Electrochemical Society Inc., 2014. p. 285-291.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Maeda, K, Yasuda, K, Nohira, T, Hagiwara, R & Homma, T 2014, A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt. in ECS Transactions. 4 edn, vol. 64, Electrochemical Society Inc., pp. 285-291, 19th International Symposium on Molten Salts and Ionic Liquids, MS and IL 2014 - 2014 ECS and SMEQ Joint International Meeting, Cancun, Mexico, 14/10/5. https://doi.org/10.1149/06404.0285ecst
    Maeda K, Yasuda K, Nohira T, Hagiwara R, Homma T. A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt. In ECS Transactions. 4 ed. Vol. 64. Electrochemical Society Inc. 2014. p. 285-291 https://doi.org/10.1149/06404.0285ecst
    Maeda, Kazuma ; Yasuda, Kouji ; Nohira, Toshiyuki ; Hagiwara, Rika ; Homma, Takayuki. / A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt. ECS Transactions. Vol. 64 4. ed. Electrochemical Society Inc., 2014. pp. 285-291
    @inproceedings{9ad4a26bafd5404898e9b997ce41a875,
    title = "A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt",
    abstract = "Toward the establishment of a new electrodeposition process of Si, the optimum conditions for obtaining adherent, compact and smooth Si film in molten KF-KCl-K 2SiF 6 were investigated. Galvanostatic electrolysis was conducted on an Ag substrate in eutectic KF-KCl (45:55 mol{\%}) with various current densities (10- 500 mA cm -2) and K 2SiF 6 concentrations (0.50-5.0 mol{\%}) at 923 K. Cross-sectional SEM observation of the deposits revealed that compact and smooth Si films form at intermediate K 2SiF 6 concentration and current density. The morphology of the Si deposit changed into nodular at higher current density. At lower current density, detachment of Si layer from the Ag substrate occurred during the water washing. The relationship between the deposition conditions and Si morphology is discussed from the view point of electrodeposition mechanism.",
    author = "Kazuma Maeda and Kouji Yasuda and Toshiyuki Nohira and Rika Hagiwara and Takayuki Homma",
    year = "2014",
    doi = "10.1149/06404.0285ecst",
    language = "English",
    volume = "64",
    pages = "285--291",
    booktitle = "ECS Transactions",
    publisher = "Electrochemical Society Inc.",
    edition = "4",

    }

    TY - GEN

    T1 - A new electrodeposition process of crystalline silicon utilizing water-soluble KF-KCl molten salt

    AU - Maeda, Kazuma

    AU - Yasuda, Kouji

    AU - Nohira, Toshiyuki

    AU - Hagiwara, Rika

    AU - Homma, Takayuki

    PY - 2014

    Y1 - 2014

    N2 - Toward the establishment of a new electrodeposition process of Si, the optimum conditions for obtaining adherent, compact and smooth Si film in molten KF-KCl-K 2SiF 6 were investigated. Galvanostatic electrolysis was conducted on an Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10- 500 mA cm -2) and K 2SiF 6 concentrations (0.50-5.0 mol%) at 923 K. Cross-sectional SEM observation of the deposits revealed that compact and smooth Si films form at intermediate K 2SiF 6 concentration and current density. The morphology of the Si deposit changed into nodular at higher current density. At lower current density, detachment of Si layer from the Ag substrate occurred during the water washing. The relationship between the deposition conditions and Si morphology is discussed from the view point of electrodeposition mechanism.

    AB - Toward the establishment of a new electrodeposition process of Si, the optimum conditions for obtaining adherent, compact and smooth Si film in molten KF-KCl-K 2SiF 6 were investigated. Galvanostatic electrolysis was conducted on an Ag substrate in eutectic KF-KCl (45:55 mol%) with various current densities (10- 500 mA cm -2) and K 2SiF 6 concentrations (0.50-5.0 mol%) at 923 K. Cross-sectional SEM observation of the deposits revealed that compact and smooth Si films form at intermediate K 2SiF 6 concentration and current density. The morphology of the Si deposit changed into nodular at higher current density. At lower current density, detachment of Si layer from the Ag substrate occurred during the water washing. The relationship between the deposition conditions and Si morphology is discussed from the view point of electrodeposition mechanism.

    UR - http://www.scopus.com/inward/record.url?scp=84921325223&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84921325223&partnerID=8YFLogxK

    U2 - 10.1149/06404.0285ecst

    DO - 10.1149/06404.0285ecst

    M3 - Conference contribution

    AN - SCOPUS:84921325223

    VL - 64

    SP - 285

    EP - 291

    BT - ECS Transactions

    PB - Electrochemical Society Inc.

    ER -