@inproceedings{d2fe28fc40f748a881ee5b72619ba3dc,
title = "A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation",
abstract = "A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.",
author = "Takanobu Watanabe and Iwao Ohdomari",
year = "2007",
doi = "10.1149/1.2728814",
language = "English",
isbn = "9781566775526",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "465--481",
booktitle = "ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics",
edition = "3",
note = "Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",
}