A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

Takanobu Watanabe; Iwao Ohdomari

doi:10.1149/1.2728814

A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

Takanobu Watanabe, Iwao Ohdomari

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO₂/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.

Original language	English
Title of host publication	ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics
Pages	465-481
Number of pages	17
Edition	3
DOIs	https://doi.org/10.1149/1.2728814
Publication status	Published - 2007 Dec 1
Event	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL, United States Duration: 2007 May 6 → 2007 May 11

Publication series

Name	ECS Transactions
Number	3
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting
Country	United States
City	Chicago, IL
Period	07/5/6 → 07/5/11

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2728814

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Watanabe, T., & Ohdomari, I. (2007). A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. In ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (3 ed., pp. 465-481). (ECS Transactions; Vol. 6, No. 3). https://doi.org/10.1149/1.2728814

A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. / Watanabe, Takanobu; Ohdomari, Iwao.

ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3. ed. 2007. p. 465-481 (ECS Transactions; Vol. 6, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Watanabe, T & Ohdomari, I 2007, A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. in ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3 edn, ECS Transactions, no. 3, vol. 6, pp. 465-481, Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting, Chicago, IL, United States, 07/5/6. https://doi.org/10.1149/1.2728814

@inproceedings{d2fe28fc40f748a881ee5b72619ba3dc,

title = "A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation",

abstract = "A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.",

author = "Takanobu Watanabe and Iwao Ohdomari",

year = "2007",

month = dec,

day = "1",

doi = "10.1149/1.2728814",

language = "English",

isbn = "9781566775526",

series = "ECS Transactions",

number = "3",

pages = "465--481",

booktitle = "ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics",

edition = "3",

note = "Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",

}

TY - GEN

T1 - A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

AU - Watanabe, Takanobu

AU - Ohdomari, Iwao

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.

AB - A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.

UR - http://www.scopus.com/inward/record.url?scp=45849085420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45849085420&partnerID=8YFLogxK

U2 - 10.1149/1.2728814

DO - 10.1149/1.2728814

M3 - Conference contribution

AN - SCOPUS:45849085420

SN - 9781566775526

T3 - ECS Transactions

SP - 465

EP - 481

BT - ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics

T2 - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting

Y2 - 6 May 2007 through 11 May 2007

ER -