Abstract
A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Pages | 465-481 |
| Number of pages | 17 |
| Volume | 6 |
| Edition | 3 |
| DOIs | |
| Publication status | Published - 2007 |
| Event | Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL Duration: 2007 May 6 → 2007 May 11 |
Other
| Other | Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting |
|---|---|
| City | Chicago, IL |
| Period | 07/5/6 → 07/5/11 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. / Watanabe, Takanobu; Ohdomari, Iwao.
ECS Transactions. Vol. 6 3. ed. 2007. p. 465-481.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation
AU - Watanabe, Takanobu
AU - Ohdomari, Iwao
PY - 2007
Y1 - 2007
N2 - A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.
AB - A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.
UR - http://www.scopus.com/inward/record.url?scp=45849085420&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=45849085420&partnerID=8YFLogxK
U2 - 10.1149/1.2728814
DO - 10.1149/1.2728814
M3 - Conference contribution
AN - SCOPUS:45849085420
SN - 9781566775526
VL - 6
SP - 465
EP - 481
BT - ECS Transactions
ER -