A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

Takanobu Watanabe, Iwao Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO2/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.

    Original languageEnglish
    Title of host publicationECS Transactions
    Pages465-481
    Number of pages17
    Volume6
    Edition3
    DOIs
    Publication statusPublished - 2007
    EventSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL
    Duration: 2007 May 62007 May 11

    Other

    OtherSymposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting
    CityChicago, IL
    Period07/5/607/5/11

    Fingerprint

    Silicon
    Oxidation
    Kinetics
    Kinetic theory
    Oxides
    Hot Temperature

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. / Watanabe, Takanobu; Ohdomari, Iwao.

    ECS Transactions. Vol. 6 3. ed. 2007. p. 465-481.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Watanabe, T & Ohdomari, I 2007, A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. in ECS Transactions. 3 edn, vol. 6, pp. 465-481, Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting, Chicago, IL, 07/5/6. https://doi.org/10.1149/1.2728814
    Watanabe, Takanobu ; Ohdomari, Iwao. / A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. ECS Transactions. Vol. 6 3. ed. 2007. pp. 465-481
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