A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

Takanobu Watanabe; Iwao Ohdomari

doi:10.1149/1.2728814

A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation

Takanobu Watanabe, Iwao Ohdomari

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A newly formulated kinetic theory for thermal oxidation of silicon is reviewed. The new theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the SiO₂/Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the new expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is opposite conclusion to the Deal-Grove theory.

Original language	English
Title of host publication	ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics
Pages	465-481
Number of pages	17
Edition	3
DOIs	https://doi.org/10.1149/1.2728814
Publication status	Published - 2007 Dec 1
Event	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting - Chicago, IL, United States Duration: 2007 May 6 → 2007 May 11

Publication series

Name	ECS Transactions
Number	3
Volume	6
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting
Country	United States
City	Chicago, IL
Period	07/5/6 → 07/5/11

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ASJC Scopus subject areas

Engineering(all)

Cite this

Watanabe, T., & Ohdomari, I. (2007). A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. In ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (3 ed., pp. 465-481). (ECS Transactions; Vol. 6, No. 3). https://doi.org/10.1149/1.2728814

A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. / Watanabe, Takanobu; Ohdomari, Iwao.

ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3. ed. 2007. p. 465-481 (ECS Transactions; Vol. 6, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Watanabe, T & Ohdomari, I 2007, A new kinetic equation for thermal oxidation of silicon replacing the deal-grove equation. in ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics. 3 edn, ECS Transactions, no. 3, vol. 6, pp. 465-481, Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting, Chicago, IL, United States, 07/5/6. https://doi.org/10.1149/1.2728814

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Access to Document

10.1149/1.2728814