A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers

Yasunori Yonekuta, Kenji Honda, Hiroyuki Nishide

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A non-volatile, bistable, and rewritable organic memory device was successfully fabricated with the layers of poly(2,2,6,6-tetramethylpiperidine-1-oxyl methacrylate) (PTMA) and poly(methyl methacrylate) (PMMA) containing silver salt. The PTMA layer was employed as a p-dopable material, while the silver salt-dispersed PMMA layer acted as an n-dopable material. The ON-OFF ratio between low-conductivity and high-conductivity states amounted to more than four orders of magnitude, and the retention time was longer than 103 sec. The device was characterized by excellent rewritability.

Original languageEnglish
Pages (from-to)281-284
Number of pages4
JournalPolymers for Advanced Technologies
Volume19
Issue number4
DOIs
Publication statusPublished - 2008 Apr

Fingerprint

Polymethyl methacrylates
Silver
Salts
Polymethyl Methacrylate
Data storage equipment
Methacrylates
3-hydroxyphenyltrimethylammonium
nitroxyl

Keywords

  • I-V characteristics
  • Nitroxide radical
  • Polymer memory
  • Radical polymer

ASJC Scopus subject areas

  • Polymers and Plastics

Cite this

A non-volatile, bistable, and rewritable memory device fabricated with poly(nitroxide radical) and silver salt layers. / Yonekuta, Yasunori; Honda, Kenji; Nishide, Hiroyuki.

In: Polymers for Advanced Technologies, Vol. 19, No. 4, 04.2008, p. 281-284.

Research output: Contribution to journalArticle

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