TY - GEN
T1 - A nonlinear drain resistance pHEMT model for millimeter-wave high power Amplifiers
AU - Inoue, Akira
AU - Amasuga, Hirotaka
AU - Goto, Seiki
AU - Miyazaki, Moriyasu
PY - 2008
Y1 - 2008
N2 - A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.
AB - A high power pHEMT with longer drain-gate separation can operate at higher voltage. However, it shows large output power loss at millimeter-wave in addition to the conventional parasitic power dissipation. The nonlinear drain resistance Rd of the pHEMT is found to cause the large power loss, although it behaves as a conventional resistor at low frequency. The nonlinearity of the Rd is modeled and shows good agreement with the measurement. Comparisons of pHEMTs with different nonlinear Rd also support the model.
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U2 - 10.1109/EMICC.2008.4772284
DO - 10.1109/EMICC.2008.4772284
M3 - Conference contribution
AN - SCOPUS:66649114504
SN - 9782874870071
T3 - 2008 European Microwave Integrated Circuit Conference, EuMIC 2008
SP - 282
EP - 285
BT - 2008 European Microwave Integrated Circuit Conference, EuMIC 2008
T2 - 2008 European Microwave Integrated Circuit Conference, EuMIC 2008
Y2 - 27 October 2008 through 31 October 2008
ER -