A nonvolatile programmable solid-electrolyte nanometer switch

Shunichi Kaeriyama; Toshitsugu Sakamoto; Hiroshi Sunamura; Masayuki Mizuno; Hisao Kawaura; Tsuyoshi Hasegawa; Kazuya Terabe; Tomonobu Nakayama; Masakazu Aono

doi:10.1109/JSSC.2004.837244

A nonvolatile programmable solid-electrolyte nanometer switch

Shunichi Kaeriyama^*, Toshitsugu Sakamoto, Hiroshi Sunamura, Masayuki Mizuno, Hisao Kawaura, Tsuyoshi Hasegawa, Kazuya Terabe, Tomonobu Nakayama, Masakazu Aono

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

195 Citations (Scopus)

Abstract

In this paper, a reconfigurable LSI employing a non-volatile nanometer-scale switch, NanoBridge, is proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte copper sulfide, has a <30-nm contact diameter and <100-Ω on-resistance. Because of its small size, it can be used to create extremely dense field-programmable logic arrays. A 4 × 4 crossbar switch and a 2-input look-up-table circuit are fabricated with 0.18-μm CMOS technology, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays. A 1-kb nonvolatile memory is also presented, and its potential for use as a low-voltage memory device is demonstrated.

Original language	English
Pages (from-to)	168-175
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	40
Issue number	1
DOIs	https://doi.org/10.1109/JSSC.2004.837244
Publication status	Published - 2005 Jan
Externally published	Yes

Keywords

Crossbar switch
FPGA
Nonvolatile memory
Reconfigurable logic
Solid electrolyte switch

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/JSSC.2004.837244

Cite this

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title = "A nonvolatile programmable solid-electrolyte nanometer switch",

abstract = "In this paper, a reconfigurable LSI employing a non-volatile nanometer-scale switch, NanoBridge, is proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte copper sulfide, has a <30-nm contact diameter and <100-Ω on-resistance. Because of its small size, it can be used to create extremely dense field-programmable logic arrays. A 4 × 4 crossbar switch and a 2-input look-up-table circuit are fabricated with 0.18-μm CMOS technology, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays. A 1-kb nonvolatile memory is also presented, and its potential for use as a low-voltage memory device is demonstrated.",

keywords = "Crossbar switch, FPGA, Nonvolatile memory, Reconfigurable logic, Solid electrolyte switch",

author = "Shunichi Kaeriyama and Toshitsugu Sakamoto and Hiroshi Sunamura and Masayuki Mizuno and Hisao Kawaura and Tsuyoshi Hasegawa and Kazuya Terabe and Tomonobu Nakayama and Masakazu Aono",

note = "Funding Information: Manuscript received April 13, 2004; revised May 28, 2004. This work was supported in part by Solution Oriented Research for Science and Technology of the Japan Science and Technology Agency (JST).",

year = "2005",

month = jan,

doi = "10.1109/JSSC.2004.837244",

language = "English",

volume = "40",

pages = "168--175",

journal = "IEEE Journal of Solid-State Circuits",

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AU - Kaeriyama, Shunichi

AU - Sakamoto, Toshitsugu

AU - Sunamura, Hiroshi

AU - Mizuno, Masayuki

AU - Kawaura, Hisao

AU - Hasegawa, Tsuyoshi

AU - Terabe, Kazuya

AU - Nakayama, Tomonobu

AU - Aono, Masakazu

N1 - Funding Information: Manuscript received April 13, 2004; revised May 28, 2004. This work was supported in part by Solution Oriented Research for Science and Technology of the Japan Science and Technology Agency (JST).

PY - 2005/1

Y1 - 2005/1

N2 - In this paper, a reconfigurable LSI employing a non-volatile nanometer-scale switch, NanoBridge, is proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte copper sulfide, has a <30-nm contact diameter and <100-Ω on-resistance. Because of its small size, it can be used to create extremely dense field-programmable logic arrays. A 4 × 4 crossbar switch and a 2-input look-up-table circuit are fabricated with 0.18-μm CMOS technology, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays. A 1-kb nonvolatile memory is also presented, and its potential for use as a low-voltage memory device is demonstrated.

AB - In this paper, a reconfigurable LSI employing a non-volatile nanometer-scale switch, NanoBridge, is proposed, and its basic operations are demonstrated. The switch, composed of solid electrolyte copper sulfide, has a <30-nm contact diameter and <100-Ω on-resistance. Because of its small size, it can be used to create extremely dense field-programmable logic arrays. A 4 × 4 crossbar switch and a 2-input look-up-table circuit are fabricated with 0.18-μm CMOS technology, and operational tests with them have confirmed the switch's potential for use in programmable logic arrays. A 1-kb nonvolatile memory is also presented, and its potential for use as a low-voltage memory device is demonstrated.

KW - Crossbar switch

KW - FPGA

KW - Nonvolatile memory

KW - Reconfigurable logic

KW - Solid electrolyte switch

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A nonvolatile programmable solid-electrolyte nanometer switch

Abstract

Keywords

ASJC Scopus subject areas

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