A nonvolatile programmable solid electrolyte nanometer switch

T. Sakamoto, S. Kaeriyama, H. Sunamura, M. Mizuno, H. Kawaura, Tsuyoshi Hasegawa, K. Terabe, T. Nakayama, M. Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Citations (Scopus)

Abstract

A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
EditorsL.C. Fujino, M. Amiri, A. Grabel, D. Jaeger, K.C. Smith
Volume47
Publication statusPublished - 2004
Externally publishedYes
EventDigest of Technical Papers - 2004 IEEE International Solid-State Circuits Conference - San Francisco, CA., United States
Duration: 2003 Feb 152003 Feb 19

Other

OtherDigest of Technical Papers - 2004 IEEE International Solid-State Circuits Conference
CountryUnited States
CitySan Francisco, CA.
Period03/2/1503/2/19

Fingerprint

Solid electrolytes
Switches
Logic devices
Data storage equipment

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture

Cite this

Sakamoto, T., Kaeriyama, S., Sunamura, H., Mizuno, M., Kawaura, H., Hasegawa, T., ... Aono, M. (2004). A nonvolatile programmable solid electrolyte nanometer switch. In L. C. Fujino, M. Amiri, A. Grabel, D. Jaeger, & K. C. Smith (Eds.), Digest of Technical Papers - IEEE International Solid-State Circuits Conference (Vol. 47)

A nonvolatile programmable solid electrolyte nanometer switch. / Sakamoto, T.; Kaeriyama, S.; Sunamura, H.; Mizuno, M.; Kawaura, H.; Hasegawa, Tsuyoshi; Terabe, K.; Nakayama, T.; Aono, M.

Digest of Technical Papers - IEEE International Solid-State Circuits Conference. ed. / L.C. Fujino; M. Amiri; A. Grabel; D. Jaeger; K.C. Smith. Vol. 47 2004.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakamoto, T, Kaeriyama, S, Sunamura, H, Mizuno, M, Kawaura, H, Hasegawa, T, Terabe, K, Nakayama, T & Aono, M 2004, A nonvolatile programmable solid electrolyte nanometer switch. in LC Fujino, M Amiri, A Grabel, D Jaeger & KC Smith (eds), Digest of Technical Papers - IEEE International Solid-State Circuits Conference. vol. 47, Digest of Technical Papers - 2004 IEEE International Solid-State Circuits Conference, San Francisco, CA., United States, 03/2/15.
Sakamoto T, Kaeriyama S, Sunamura H, Mizuno M, Kawaura H, Hasegawa T et al. A nonvolatile programmable solid electrolyte nanometer switch. In Fujino LC, Amiri M, Grabel A, Jaeger D, Smith KC, editors, Digest of Technical Papers - IEEE International Solid-State Circuits Conference. Vol. 47. 2004
Sakamoto, T. ; Kaeriyama, S. ; Sunamura, H. ; Mizuno, M. ; Kawaura, H. ; Hasegawa, Tsuyoshi ; Terabe, K. ; Nakayama, T. ; Aono, M. / A nonvolatile programmable solid electrolyte nanometer switch. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. editor / L.C. Fujino ; M. Amiri ; A. Grabel ; D. Jaeger ; K.C. Smith. Vol. 47 2004.
@inproceedings{629531affc284666bd69210cf70f270a,
title = "A nonvolatile programmable solid electrolyte nanometer switch",
abstract = "A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.",
author = "T. Sakamoto and S. Kaeriyama and H. Sunamura and M. Mizuno and H. Kawaura and Tsuyoshi Hasegawa and K. Terabe and T. Nakayama and M. Aono",
year = "2004",
language = "English",
volume = "47",
editor = "L.C. Fujino and M. Amiri and A. Grabel and D. Jaeger and K.C. Smith",
booktitle = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

}

TY - GEN

T1 - A nonvolatile programmable solid electrolyte nanometer switch

AU - Sakamoto, T.

AU - Kaeriyama, S.

AU - Sunamura, H.

AU - Mizuno, M.

AU - Kawaura, H.

AU - Hasegawa, Tsuyoshi

AU - Terabe, K.

AU - Nakayama, T.

AU - Aono, M.

PY - 2004

Y1 - 2004

N2 - A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.

AB - A nanometer-scale nonvolatile switch composed of a solid electrolyte is <30nm and has an on-resistance <100Ω. A field programmable logic device and 1kb nonvolatile memory using the switch are demonstrated. The crossbar switch is fabricated in a 1.8V 0.18μm CMOS process.

UR - http://www.scopus.com/inward/record.url?scp=2442663890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442663890&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:2442663890

VL - 47

BT - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

A2 - Fujino, L.C.

A2 - Amiri, M.

A2 - Grabel, A.

A2 - Jaeger, D.

A2 - Smith, K.C.

ER -