A novel current reuse wideband amplifier using 130 nm Si CMOS technology for 22 - 29 GHz applications

Q. Liu, J. Sun, Y. J. Suh, S. Kurachi, N. Itoh, T. Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a novel wideband amplifier is proposed for 22 - 29 GHz UWB applications in 0.13 um Si CMOS technology. In order to reduce the de current of the amplifier, a novel current reuse technique is adopted in a casco de CMOS transistor. In addition, a low-pass type feedback circuit for the first stage and an inductive feedback circuit for the second stage are designed to make the bandwidth wider. It is expected that the wideband amplifier exhibits a gain of 11.3 dB +/- 1.2 dB with a dc power consumption as low as 9.8 mW.

Original languageEnglish
Title of host publication2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009
Pages807-809
Number of pages3
Publication statusPublished - 2009 Dec 31
Event2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009 - Milpitas, CA, United States
Duration: 2009 Jul 232009 Jul 25

Publication series

Name2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009

Conference

Conference2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009
CountryUnited States
CityMilpitas, CA
Period09/7/2309/7/25

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Liu, Q., Sun, J., Suh, Y. J., Kurachi, S., Itoh, N., & Yoshimasu, T. (2009). A novel current reuse wideband amplifier using 130 nm Si CMOS technology for 22 - 29 GHz applications. In 2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009 (pp. 807-809). [5250377] (2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009).