A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET can be obtained. Structural optimization study reveals that low Si channel impurity concentration and the alignment of the gate electrode edge to the hetero-junction lead to better performance of the TFET. Scaling of the gate length increases the off-state leakage current, however, the drain voltage (Vd) reduction in accordance with the gate scaling suppresses the phenomenon, keeping its high drivability.

    Original languageEnglish
    Pages (from-to)899-904
    Number of pages6
    JournalMicroelectronics Reliability
    Volume54
    Issue number5
    DOIs
    Publication statusPublished - 2014

    Fingerprint

    Semiconducting silicon
    Tunnel junctions
    Field effect transistors
    tunnel junctions
    Scalability
    field effect transistors
    silicon
    Structural optimization
    Drain current
    Silicon
    Valence bands
    Conduction bands
    scaling
    Leakage currents
    Energy gap
    Impurities
    conduction bands
    Electrodes
    leakage
    alignment

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Surfaces, Coatings and Films
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Safety, Risk, Reliability and Quality

    Cite this

    A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. / Wu, Yan; Hasegawa, Hiroyuki; Kakushima, Kuniyuki; Ohmori, Kenji; Watanabe, Takanobu; Nishiyama, Akira; Sugii, Nobuyuki; Wakabayashi, Hitoshi; Tsutsui, Kazuo; Kataoka, Yoshinori; Natori, Kenji; Yamada, Keisaku; Iwai, Hiroshi.

    In: Microelectronics Reliability, Vol. 54, No. 5, 2014, p. 899-904.

    Research output: Contribution to journalArticle

    Wu, Y, Hasegawa, H, Kakushima, K, Ohmori, K, Watanabe, T, Nishiyama, A, Sugii, N, Wakabayashi, H, Tsutsui, K, Kataoka, Y, Natori, K, Yamada, K & Iwai, H 2014, 'A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability', Microelectronics Reliability, vol. 54, no. 5, pp. 899-904. https://doi.org/10.1016/j.microrel.2014.01.023
    Wu, Yan ; Hasegawa, Hiroyuki ; Kakushima, Kuniyuki ; Ohmori, Kenji ; Watanabe, Takanobu ; Nishiyama, Akira ; Sugii, Nobuyuki ; Wakabayashi, Hitoshi ; Tsutsui, Kazuo ; Kataoka, Yoshinori ; Natori, Kenji ; Yamada, Keisaku ; Iwai, Hiroshi. / A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. In: Microelectronics Reliability. 2014 ; Vol. 54, No. 5. pp. 899-904.
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    abstract = "A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET can be obtained. Structural optimization study reveals that low Si channel impurity concentration and the alignment of the gate electrode edge to the hetero-junction lead to better performance of the TFET. Scaling of the gate length increases the off-state leakage current, however, the drain voltage (Vd) reduction in accordance with the gate scaling suppresses the phenomenon, keeping its high drivability.",
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    AU - Watanabe, Takanobu

    AU - Nishiyama, Akira

    AU - Sugii, Nobuyuki

    AU - Wakabayashi, Hitoshi

    AU - Tsutsui, Kazuo

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