A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Yan Wu; Hiroyuki Hasegawa; Kuniyuki Kakushima; Kenji Ohmori; Takanobu Watanabe; Akira Nishiyama; Nobuyuki Sugii; Hitoshi Wakabayashi; Kazuo Tsutsui; Yoshinori Kataoka; Kenji Natori; Keisaku Yamada; Hiroshi Iwai

doi:10.1016/j.microrel.2014.01.023

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Yan Wu^*, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg₂Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET can be obtained. Structural optimization study reveals that low Si channel impurity concentration and the alignment of the gate electrode edge to the hetero-junction lead to better performance of the TFET. Scaling of the gate length increases the off-state leakage current, however, the drain voltage (V_d) reduction in accordance with the gate scaling suppresses the phenomenon, keeping its high drivability.

Original language	English
Pages (from-to)	899-904
Number of pages	6
Journal	Microelectronics Reliability
Volume	54
Issue number	5
DOIs	https://doi.org/10.1016/j.microrel.2014.01.023
Publication status	Published - 2014 May

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2014.01.023

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title = "A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability",

abstract = "A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET can be obtained. Structural optimization study reveals that low Si channel impurity concentration and the alignment of the gate electrode edge to the hetero-junction lead to better performance of the TFET. Scaling of the gate length increases the off-state leakage current, however, the drain voltage (Vd) reduction in accordance with the gate scaling suppresses the phenomenon, keeping its high drivability.",

author = "Yan Wu and Hiroyuki Hasegawa and Kuniyuki Kakushima and Kenji Ohmori and Takanobu Watanabe and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kazuo Tsutsui and Yoshinori Kataoka and Kenji Natori and Keisaku Yamada and Hiroshi Iwai",

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doi = "10.1016/j.microrel.2014.01.023",

language = "English",

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T1 - A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

AU - Wu, Yan

AU - Hasegawa, Hiroyuki

AU - Kakushima, Kuniyuki

AU - Ohmori, Kenji

AU - Watanabe, Takanobu

AU - Nishiyama, Akira

AU - Sugii, Nobuyuki

AU - Wakabayashi, Hitoshi

AU - Tsutsui, Kazuo

AU - Kataoka, Yoshinori

AU - Natori, Kenji

AU - Yamada, Keisaku

AU - Iwai, Hiroshi

PY - 2014/5

Y1 - 2014/5

N2 - A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET can be obtained. Structural optimization study reveals that low Si channel impurity concentration and the alignment of the gate electrode edge to the hetero-junction lead to better performance of the TFET. Scaling of the gate length increases the off-state leakage current, however, the drain voltage (Vd) reduction in accordance with the gate scaling suppresses the phenomenon, keeping its high drivability.

AB - A new type of silicon-based Tunneling FET (TFET) using semiconducting silicide Mg2Si/Si hetero-junction as source-channel structure is proposed and the device simulation has been presented. With narrow bandgap of silicide and the conduction and valence band discontinuous at the hetero-junction, larger drain current and smaller subthreshold swing than those of Si homo-junction TFET can be obtained. Structural optimization study reveals that low Si channel impurity concentration and the alignment of the gate electrode edge to the hetero-junction lead to better performance of the TFET. Scaling of the gate length increases the off-state leakage current, however, the drain voltage (Vd) reduction in accordance with the gate scaling suppresses the phenomenon, keeping its high drivability.

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SN - 0026-2714

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A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Abstract

ASJC Scopus subject areas

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