A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss

Suyang Liu, Yue Zhang, Zijian Zhang, Masahide Inuishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.

Original languageEnglish
Title of host publication6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages204-206
Number of pages3
ISBN (Electronic)9781665421775
DOIs
Publication statusPublished - 2022
Event6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022 - Virtual, Online, Japan
Duration: 2022 Mar 62022 Mar 9

Publication series

Name6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022

Conference

Conference6th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2022
Country/TerritoryJapan
CityVirtual, Online
Period22/3/622/3/9

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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