A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell

T. Okagaki, M. Tanizawa, M. Fujinaga, T. Kunikiyo, H. Yuki, K. Ishikawa, Y. Nishikawa, T. Eimori, M. Inuishi, Y. Oji

Research output: Contribution to conferencePaper

Abstract

We propose a novel extraction technique of the control gate capacitance coupling coefficient(αg) for stacked gate flash memory cell. Five novel test patterns that the CBCM method is applied to, are developed to directly measure all the capacitances connected to the floating gate. Comparison of extracted αg with the TCAD result proves the validity of this technique. Moreover, we have confirmed that conventional techniques, which use the channel current characteristics, overestimate the αg variation due to channel mobility variation. Therefore direct αg extraction using our proposed technique is necessary for precise process monitoring.

Original languageEnglish
Pages219-222
Number of pages4
Publication statusPublished - 2005 Nov 15
Externally publishedYes
EventICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures - Leuven, Belgium
Duration: 2005 Apr 42005 Apr 7

Other

OtherICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures
CountryBelgium
CityLeuven
Period05/4/405/4/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Okagaki, T., Tanizawa, M., Fujinaga, M., Kunikiyo, T., Yuki, H., Ishikawa, K., Nishikawa, Y., Eimori, T., Inuishi, M., & Oji, Y. (2005). A novel mobility-variation-free extraction technique of capacitance coupling coefficient for stacked flash memory cell. 219-222. Paper presented at ICMTS 2005 - 2005 IEEE International Conference on Microelectronic Test Structures, Leuven, Belgium.