A novel variable inductor using a triple transformer and MOS switches in 0.13 μm CMOS technology

Jiangtao Sun, Shihai He, Xuewen Zhu, Qing Liu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a novel variable inductor consisting of a triple transformer, pMOSFET switches and a level shift circuit in 0.13 μm CMOS technology. The structure of the variable inductor is designed and analyzed by using Ansoft HFSS. The inductance varies from 0.678 nH to 1.055 nH with changing a control voltage from 0 to 1.5 V. The quality factor of the variable inductor is around 7 at 3.4 GHz.

Original languageEnglish
Title of host publication2011 China-Japan Joint Microwave Conference Proceedings, CJMW 2011
Pages296-299
Number of pages4
Publication statusPublished - 2011
Event2011 China-Japan Joint Microwave Conference, CJMW 2011 - Hangzhou, China
Duration: 2011 Apr 202011 Apr 22

Publication series

Name2011 China-Japan Joint Microwave Conference Proceedings, CJMW 2011

Conference

Conference2011 China-Japan Joint Microwave Conference, CJMW 2011
CountryChina
CityHangzhou
Period11/4/2011/4/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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