A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS

Xin Yang, Xiao Xu, Zheng Sun, Takayuki Shibata, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a novel sub-harmonic mixer (SHM) IC design for W-band automotive applications in 130-nm SiGe BiCMOS technology. The SHM makes use of a Common Emitter Common Collector Transistor Pair (CECCTP) structure with bottom-LO-configuration. On-chip Marchand balun is utilized for W-band on-wafer measurement. The novel SHM exhibits a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of-7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA with a supply voltage of 3.3 V.

Original languageEnglish
Title of host publicationEuropean Microwave Week 2015:
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages172-175
Number of pages4
ISBN (Print)9782874870408
DOIs
Publication statusPublished - 2015 Dec 2
Event10th European Microwave Integrated Circuits Conference, EuMIC 2015 - Paris, France
Duration: 2015 Sep 72015 Sep 8

Other

Other10th European Microwave Integrated Circuits Conference, EuMIC 2015
CountryFrance
CityParis
Period15/9/715/9/8

Fingerprint

BiCMOS technology
Transistors
harmonics
Electric potential
accumulators
emitters
transistors
chips
wafers
Integrated circuit design
electric potential
configurations

Keywords

  • 130-nm SiGe BiCMOS
  • Bottom-LO-configuratoin
  • CECCTP
  • Low power
  • Marchand Balun
  • Sub-harmonic mixer
  • W-band

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Radiation

Cite this

Yang, X., Xu, X., Sun, Z., Shibata, T., & Yoshimasu, T. (2015). A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS. In European Microwave Week 2015: (pp. 172-175). [7345096] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2015.7345096

A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS. / Yang, Xin; Xu, Xiao; Sun, Zheng; Shibata, Takayuki; Yoshimasu, Toshihiko.

European Microwave Week 2015:. Institute of Electrical and Electronics Engineers Inc., 2015. p. 172-175 7345096.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yang, X, Xu, X, Sun, Z, Shibata, T & Yoshimasu, T 2015, A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS. in European Microwave Week 2015:., 7345096, Institute of Electrical and Electronics Engineers Inc., pp. 172-175, 10th European Microwave Integrated Circuits Conference, EuMIC 2015, Paris, France, 15/9/7. https://doi.org/10.1109/EuMIC.2015.7345096
Yang X, Xu X, Sun Z, Shibata T, Yoshimasu T. A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS. In European Microwave Week 2015:. Institute of Electrical and Electronics Engineers Inc. 2015. p. 172-175. 7345096 https://doi.org/10.1109/EuMIC.2015.7345096
Yang, Xin ; Xu, Xiao ; Sun, Zheng ; Shibata, Takayuki ; Yoshimasu, Toshihiko. / A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS. European Microwave Week 2015:. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 172-175
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abstract = "This paper presents a novel sub-harmonic mixer (SHM) IC design for W-band automotive applications in 130-nm SiGe BiCMOS technology. The SHM makes use of a Common Emitter Common Collector Transistor Pair (CECCTP) structure with bottom-LO-configuration. On-chip Marchand balun is utilized for W-band on-wafer measurement. The novel SHM exhibits a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of-7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA with a supply voltage of 3.3 V.",
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