Abstract
An oblique ion milling simulation method is proposed in which etching and redeposition at the pattern side wall are taken into account. The effective etching rate at the pattern side wall is determined as the difference between the etching rate given by the angular dependency and the redeposition rate. The redeposition rate is assumed to be proportional to the etching rate of the material to be etched at the flat surface. A pattern edge profile simulation is carried out for an oblique ion milling of silicon. The simulation results agreed well with the experimental results with a relatively large ion beam incident angle.
| Original language | English |
|---|---|
| Pages (from-to) | 1552-1557 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 2 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1984 Oct |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films