A PN junction-current model for advanced MOSFET technologies

Ryosuke Inagaki; Norio Sadachika; Mitiko Miura-Mattausch; Yasuaki Inoue

doi:10.1587/transfun.E92.A.983

A PN junction-current model for advanced MOSFET technologies

Ryosuke Inagaki^*, Norio Sadachika, Mitiko Miura-Mattausch, Yasuaki Inoue

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potentialbased MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

Original language	English
Pages (from-to)	983-989
Number of pages	7
Journal	IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Volume	E92-A
Issue number	4
DOIs	https://doi.org/10.1587/transfun.E92.A.983
Publication status	Published - 2009

Keywords

Diode current
HiSIM
PN junction current
Surface potential

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Graphics and Computer-Aided Design
Applied Mathematics
Signal Processing

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10.1587/transfun.E92.A.983

Cite this

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title = "A PN junction-current model for advanced MOSFET technologies",

abstract = "A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potentialbased MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.",

keywords = "Diode current, HiSIM, PN junction current, Surface potential",

author = "Ryosuke Inagaki and Norio Sadachika and Mitiko Miura-Mattausch and Yasuaki Inoue",

year = "2009",

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language = "English",

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AU - Inagaki, Ryosuke

AU - Sadachika, Norio

AU - Miura-Mattausch, Mitiko

AU - Inoue, Yasuaki

PY - 2009

Y1 - 2009

N2 - A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potentialbased MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

AB - A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potentialbased MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

KW - Diode current

KW - HiSIM

KW - PN junction current

KW - Surface potential

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SN - 0916-8508

IS - 4

ER -

A PN junction-current model for advanced MOSFET technologies

Abstract

Keywords

ASJC Scopus subject areas

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