A PN junction-current model for advanced MOSFET technologies

Ryosuke Inagaki, Norio Sadachika, Mitiko Miura-Mattausch, Yasuaki Inoue

    Research output: Contribution to journalArticle

    Abstract

    A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potentialbased MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

    Original languageEnglish
    Pages (from-to)983-989
    Number of pages7
    JournalIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
    VolumeE92-A
    Issue number4
    DOIs
    Publication statusPublished - 2009

    Fingerprint

    MOSFET
    Diode
    Diodes
    Model
    Reverse
    Simulation Model
    Covering
    Range of data
    Geometry
    Temperature

    Keywords

    • Diode current
    • HiSIM
    • PN junction current
    • Surface potential

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Graphics and Computer-Aided Design
    • Applied Mathematics
    • Signal Processing

    Cite this

    A PN junction-current model for advanced MOSFET technologies. / Inagaki, Ryosuke; Sadachika, Norio; Miura-Mattausch, Mitiko; Inoue, Yasuaki.

    In: IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, Vol. E92-A, No. 4, 2009, p. 983-989.

    Research output: Contribution to journalArticle

    Inagaki, Ryosuke ; Sadachika, Norio ; Miura-Mattausch, Mitiko ; Inoue, Yasuaki. / A PN junction-current model for advanced MOSFET technologies. In: IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences. 2009 ; Vol. E92-A, No. 4. pp. 983-989.
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