A PN junction-current model for advanced MOSFET technologies

Ryosuke Inagaki; Norio Sadachika; Mitiko Miura-Mattausch; Yasuaki Inoue

doi:10.1587/transfun.E92.A.983

A PN junction-current model for advanced MOSFET technologies

Ryosuke Inagaki, Norio Sadachika, Mitiko Miura-Mattausch, Yasuaki Inoue

Research output: Contribution to journal › Article

Abstract

A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potentialbased MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.

Original language	English
Pages (from-to)	983-989
Number of pages	7
Journal	IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Volume	E92-A
Issue number	4
DOIs	https://doi.org/10.1587/transfun.E92.A.983
Publication status	Published - 2009

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Keywords

Diode current
HiSIM
PN junction current
Surface potential

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Graphics and Computer-Aided Design
Applied Mathematics
Signal Processing

Cite this

Inagaki, R., Sadachika, N., Miura-Mattausch, M., & Inoue, Y. (2009). A PN junction-current model for advanced MOSFET technologies. IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, E92-A(4), 983-989. https://doi.org/10.1587/transfun.E92.A.983

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Access to Document

10.1587/transfun.E92.A.983