Abstract
A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potentialbased MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.
Original language | English |
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Pages (from-to) | 983-989 |
Number of pages | 7 |
Journal | IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences |
Volume | E92-A |
Issue number | 4 |
DOIs | |
Publication status | Published - 2009 |
Keywords
- Diode current
- HiSIM
- PN junction current
- Surface potential
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Computer Graphics and Computer-Aided Design
- Applied Mathematics
- Signal Processing