A pressure sensitive ionic gel FET for tactile sensing

Shunsuke Yamada; T. Sato; H. Toshiyoshi

doi:10.1063/1.4986198

A pressure sensitive ionic gel FET for tactile sensing

Shunsuke Yamada^*, T. Sato, H. Toshiyoshi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 10⁴, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 10³ kPa^-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.

Original language	English
Article number	253501
Journal	Applied Physics Letters
Volume	110
Issue number	25
DOIs	https://doi.org/10.1063/1.4986198
Publication status	Published - 2017 Jun 19
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4986198

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abstract = "Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.",

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AU - Yamada, Shunsuke

AU - Sato, T.

AU - Toshiyoshi, H.

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N2 - Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.

AB - Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.

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A pressure sensitive ionic gel FET for tactile sensing

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