A pressure sensitive ionic gel FET for tactile sensing

Shunsuke Yamada, T. Sato, H. Toshiyoshi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.

Original languageEnglish
Article number253501
JournalApplied Physics Letters
Volume110
Issue number25
DOIs
Publication statusPublished - 2017 Jun 19
Externally publishedYes

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field effect transistors
gels
electric potential
capacitance
threshold voltage
electrodes
sensitivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A pressure sensitive ionic gel FET for tactile sensing. / Yamada, Shunsuke; Sato, T.; Toshiyoshi, H.

In: Applied Physics Letters, Vol. 110, No. 25, 253501, 19.06.2017.

Research output: Contribution to journalArticle

Yamada, Shunsuke ; Sato, T. ; Toshiyoshi, H. / A pressure sensitive ionic gel FET for tactile sensing. In: Applied Physics Letters. 2017 ; Vol. 110, No. 25.
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