Abstract
Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.
| Original language | English |
|---|---|
| Article number | 253501 |
| Journal | Applied Physics Letters |
| Volume | 110 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2017 Jun 19 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
A pressure sensitive ionic gel FET for tactile sensing. / Yamada, Shunsuke; Sato, T.; Toshiyoshi, H.
In: Applied Physics Letters, Vol. 110, No. 25, 253501, 19.06.2017.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A pressure sensitive ionic gel FET for tactile sensing
AU - Yamada, Shunsuke
AU - Sato, T.
AU - Toshiyoshi, H.
PY - 2017/6/19
Y1 - 2017/6/19
N2 - Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.
AB - Field-effect-transistor (FET) is combined with an ionic gel to realize a pressure sensitive ionic-gel field-effect-transistor (PSG-FET) of high sensitivity and low operational voltage. The ionic gels form a layer of charge accumulation in a nanometric scale called the electrical double layer (EDL) on each electrode upon voltage application and exhibit quite high capacitance. The source-drain current through the ZnO channel increases from the initial 44 nA (without pressure) to 783 μA (with pressure, 7 kPa), yielding an ON/OFF contrast as large as 1.7 × 104, due to EDLs, which is interpreted as a pressure sensitivity of 2.2 × 103 kPa-1. Judging from the drain current and the gate voltage properties, the threshold voltage is calculated to be 2.8 V owing the large capacitance created by the ionic gel.
UR - http://www.scopus.com/inward/record.url?scp=85021173076&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85021173076&partnerID=8YFLogxK
U2 - 10.1063/1.4986198
DO - 10.1063/1.4986198
M3 - Article
AN - SCOPUS:85021173076
VL - 110
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 253501
ER -