### Abstract

In this work, a new additional opportunity to reduce the residual stresses when bonding a pair of dissimilar materials such as silicon and crystalline quartz has been revealed as a result of theoretical calculations. In parallel with a traditional method, based on lowering of bonding temperature, additional reduction of the residual stresses becomes possible owing to difference in elastic properties of dissimilar materials of the pair. In the case of coupled plates, with different coefficients of thermal expansion, the residual stresses can be reduced if the following two conditions hold simultaneously: E _{1}/(1-v _{1})< E _{2}/(1-v _{2}) and h _{1}<h _{2}. Here E _{i}- the Young's modulus, v _{i}- the Poisson ratio, and hi- the thickness of the first (i=1) and the second (i=2) bonded plates respectively. For the quartz/silicon pair, the residual stresses at the interface will be approximately 20% lower if h _{1}/h _{2} =0.2 as compared the case when both wafers are of equal in thickness.

Original language | English |
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Title of host publication | Proceedings of IEEE Sensors |

Pages | 951-953 |

Number of pages | 3 |

DOIs | |

Publication status | Published - 2011 |

Event | 10th IEEE SENSORS Conference 2011, SENSORS 2011 - Limerick Duration: 2011 Oct 28 → 2011 Oct 31 |

### Other

Other | 10th IEEE SENSORS Conference 2011, SENSORS 2011 |
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City | Limerick |

Period | 11/10/28 → 11/10/31 |

### Fingerprint

### ASJC Scopus subject areas

- Electrical and Electronic Engineering

### Cite this

*Proceedings of IEEE Sensors*(pp. 951-953). [6127031] https://doi.org/10.1109/ICSENS.2011.6127031

**A reliability of silicon-crystalline quartz bonding through reducing of the residual stresses.** / Zimin, Yury; Ueda, Toshitsugu.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*Proceedings of IEEE Sensors.*, 6127031, pp. 951-953, 10th IEEE SENSORS Conference 2011, SENSORS 2011, Limerick, 11/10/28. https://doi.org/10.1109/ICSENS.2011.6127031

}

TY - GEN

T1 - A reliability of silicon-crystalline quartz bonding through reducing of the residual stresses

AU - Zimin, Yury

AU - Ueda, Toshitsugu

PY - 2011

Y1 - 2011

N2 - In this work, a new additional opportunity to reduce the residual stresses when bonding a pair of dissimilar materials such as silicon and crystalline quartz has been revealed as a result of theoretical calculations. In parallel with a traditional method, based on lowering of bonding temperature, additional reduction of the residual stresses becomes possible owing to difference in elastic properties of dissimilar materials of the pair. In the case of coupled plates, with different coefficients of thermal expansion, the residual stresses can be reduced if the following two conditions hold simultaneously: E 1/(1-v 1)< E 2/(1-v 2) and h 12. Here E i- the Young's modulus, v i- the Poisson ratio, and hi- the thickness of the first (i=1) and the second (i=2) bonded plates respectively. For the quartz/silicon pair, the residual stresses at the interface will be approximately 20% lower if h 1/h 2 =0.2 as compared the case when both wafers are of equal in thickness.

AB - In this work, a new additional opportunity to reduce the residual stresses when bonding a pair of dissimilar materials such as silicon and crystalline quartz has been revealed as a result of theoretical calculations. In parallel with a traditional method, based on lowering of bonding temperature, additional reduction of the residual stresses becomes possible owing to difference in elastic properties of dissimilar materials of the pair. In the case of coupled plates, with different coefficients of thermal expansion, the residual stresses can be reduced if the following two conditions hold simultaneously: E 1/(1-v 1)< E 2/(1-v 2) and h 12. Here E i- the Young's modulus, v i- the Poisson ratio, and hi- the thickness of the first (i=1) and the second (i=2) bonded plates respectively. For the quartz/silicon pair, the residual stresses at the interface will be approximately 20% lower if h 1/h 2 =0.2 as compared the case when both wafers are of equal in thickness.

UR - http://www.scopus.com/inward/record.url?scp=84856880227&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856880227&partnerID=8YFLogxK

U2 - 10.1109/ICSENS.2011.6127031

DO - 10.1109/ICSENS.2011.6127031

M3 - Conference contribution

SN - 9781424492886

SP - 951

EP - 953

BT - Proceedings of IEEE Sensors

ER -