TY - JOUR
T1 - A robust silicon-on-insulator static-random-access-memory architecture by using advanced actively body-bias controlled technology
AU - Hirano, Yuuichi
AU - Tsujiuchi, Mikio
AU - Ishikawa, Kozo
AU - Shinohara, Hirofumi
AU - Terada, Takashi
AU - Maki, Yukio
AU - Iwamatsu, Toshiaki
AU - Eikyu, Katsumi
AU - Uchida, Tetsuya
AU - Obayashi, Shigeki
AU - Nii, Koji
AU - Tsukamoto, Yasumasa
AU - Yabuuchi, Makoto
AU - Ipposhi, Takashi
AU - Oda, Hidekazu
AU - Inoue, Yasuo
PY - 2008/4/18
Y1 - 2008/4/18
N2 - This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of static random access memory (SRAM). For the first time, significant enhancement of static noise margin (SNM) is successfully realized by using a body bias of load, access, and driver transistors while suppressing threshold-voltage variations. In this technology, well taps control the body potential of the load transistor and word lines also control the body potential of the access and driver transistors. It is demonstrated that the write and read margins of 65-nm-node silicon-on-insulator (SOI) SRAMs are improved by the Advanced ABC technology. Furthermore, it is found that the SNM is enhanced by 27% for 32nm and 49% for 22nm node. It is summarized that this technology is one of countermeasures for emerging generations.
AB - This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of static random access memory (SRAM). For the first time, significant enhancement of static noise margin (SNM) is successfully realized by using a body bias of load, access, and driver transistors while suppressing threshold-voltage variations. In this technology, well taps control the body potential of the load transistor and word lines also control the body potential of the access and driver transistors. It is demonstrated that the write and read margins of 65-nm-node silicon-on-insulator (SOI) SRAMs are improved by the Advanced ABC technology. Furthermore, it is found that the SNM is enhanced by 27% for 32nm and 49% for 22nm node. It is summarized that this technology is one of countermeasures for emerging generations.
KW - Full trench isolation
KW - Hybrid trench isolation
KW - LSI
KW - Partial trench isolation
KW - SOI
KW - SRAM
KW - Static noise margin
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U2 - 10.1143/JJAP.47.2092
DO - 10.1143/JJAP.47.2092
M3 - Article
AN - SCOPUS:54249127860
VL - 47
SP - 2092
EP - 2096
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 4 PART 1
ER -