This paper presents that Advanced Actively Body-bias Controlled (Advanced ABC) technology contributes to enhancing operation margins of SRAMs. Significant enhancement of Static Noise Margin (SNM) is successfully realized by using a body bias of load transistors while suppressing threshold-voltage variations for the first time. It is demonstrated that the write and read margins of 65nm-node SOI SRAMs are improved by the Advanced ABC technology. Furthermore, it is found that the SNM is enhanced by 27% for 32nm and 49% for 22nm node. It is summarized that this technology is one of countermeasures for emerging generations.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2007 Dec 1|
|Event||2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan|
Duration: 2007 Jun 12 → 2007 Jun 14
ASJC Scopus subject areas
- Electrical and Electronic Engineering