The use of self assembly monolayer has been demonstrated for direct plating on interlevel dielectric for interconnects applications. In this work we show an additional feature of that technique for direct deposition on contact application. We also present an integrated process where the self assembly activation is used for both the deposition of the barrier layer which can be used for both the contact material and the source for the silicidation process. Later all wet electroless process can be used for the contact buildup and the capping layer deposition. In this work we review the depositions of electroless Nickel alloy on various inter level dielectrics and on Si. We also discuss the integration process including deposition on exiting silicide or possible self silicidation for the formation of self aligned NiSi. We describe the process outlines and present material and electrical properties.