A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

Kouichi Akahane, Naokatsu Yamamoto, Toshimasa Umezawa, Atsushi Kanno, Tetsuya Kawanishi

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A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55μm band gain was observed, and maximum gain reached 25 dB at 1530nm when the input power was below %40 dBm.

Original languageEnglish
Article number04EG02
JournalJapanese journal of applied physics
Issue number4 SPEC. ISSUE
Publication statusPublished - 2014 Apr


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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