A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55μm band gain was observed, and maximum gain reached 25 dB at 1530nm when the input power was below %40 dBm.
ASJC Scopus subject areas
- Physics and Astronomy(all)