A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique

Kouichi Akahane, Naokatsu Yamamoto, Toshimasa Umezawa, Atsushi Kanno, Tetsuya Kawanishi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55μm band gain was observed, and maximum gain reached 25 dB at 1530nm when the input power was below %40 dBm.

Original languageEnglish
Article number04EG02
JournalJapanese Journal of Applied Physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - 2014
Externally publishedYes

Fingerprint

Semiconductor optical amplifiers
light amplifiers
Semiconductor quantum dots
quantum dots
Deterioration
deterioration
Crystals
crystals
Compensation and Redress

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

A semiconductor optical amplifier comprising highly stacked InAs quantum dots fabricated using the strain-compensation technique. / Akahane, Kouichi; Yamamoto, Naokatsu; Umezawa, Toshimasa; Kanno, Atsushi; Kawanishi, Tetsuya.

In: Japanese Journal of Applied Physics, Vol. 53, No. 4 SPEC. ISSUE, 04EG02, 2014.

Research output: Contribution to journalArticle

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