A simple and practical statistical device model for analog LSI designs

Jing Wang, Li Ding, Yasuaki Inoue

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    With the scaling of CMOS devices toward their ultimate dimensions, device performance variability induced by process variation has become a critical issue in analog LS I designs. Statistical device model library building based on statistical device model considering the process variation accurately is useful to predict the performance of analog LS I designs. However, conventional statistical device models are either complicated or not accurate enough. Therefore, a simple and practical statistical device model for analog LS I designs is proposed in this paper. Simultaneously, a simple method to extract model parameters is also proposed. Statistical analysis results of 0.65um CMOS Op-Amp based on the proposed model using Monte Carlo simulation have a good agreement with the chip measurement results.

    Original languageEnglish
    Title of host publication2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013
    PublisherIEEE Computer Society
    Pages408-412
    Number of pages5
    Volume1
    DOIs
    Publication statusPublished - 2013
    Event2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013 - Chengdu
    Duration: 2013 Nov 152013 Nov 17

    Other

    Other2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013
    CityChengdu
    Period13/11/1513/11/17

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Hardware and Architecture

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  • Cite this

    Wang, J., Ding, L., & Inoue, Y. (2013). A simple and practical statistical device model for analog LSI designs. In 2013 International Conference on Communications, Circuits and Systems, ICCCAS 2013 (Vol. 1, pp. 408-412). [6765263] IEEE Computer Society. https://doi.org/10.1109/ICCCAS.2013.6765263