A simple index to restrain abnormal protrusions in films fabricated using CD under diffusion-limited conditions

Yuya Kajikawa, Suguru Noda, Hiroshi Komiyama

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Cauliflower-like protrusions formed in CVD processes under diffusion-limited conditions have been studied both experimentally and theoretically. Both approaches indicate that the difference in diffusion fluxes to the film and to the protrusions controls the growth of such protrusions. However, direct comparisons of these two approaches have never been done, probably due to the complexity of the theoretical models. To simplify model protrusion growth, we developed a one-dimensional (ID) analytical model by hypothesizing the diffusion of growth species in the boundary layer above a growing film. Based on this model, we propose a non-dimensional quantity, k s/D, as an index of protrusion growth (D is the diffusion coefficient of the growth species, ks is the surface reaction-rate coefficient, and f film thickness). This index represents more directly the protrusion growth than does the previously proposed index, the Damköhler number, Da = k sδ/D, where δ is boundary layer thickness. To obtain smooth, protrusion-free films, D/k, should be kept larger than the desired film thickness. By controlling the process conditions to satisfy this index, we successfully fabricated protrusion-free films with SiC deposition from dichloro-dimethylsilane (DDS).

Original languageEnglish
Pages (from-to)221-228
Number of pages8
JournalChemical Vapor Deposition
Volume10
Issue number4
DOIs
Publication statusPublished - 2004 Sep
Externally publishedYes

Keywords

  • Protrusion
  • Silicon carbide
  • Surface morphology
  • Surface roughness

ASJC Scopus subject areas

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology

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