A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering

Shinji Takayanagi; Takahiko Yanagitani; Mami Matsukawa; Yoshiaki Watanabe

doi:10.1109/ULTSYM.2010.5935655

A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering

Shinji Takayanagi^*, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

C-axis parallel-oriented ZnO piezoelectric films, (112̄0) or (101̄0) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (112̄0) or (101̄0) orientation. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (112̄0) and (101̄0) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. This method made possible to form preferential (112̄0) or (101̄0) orientation in the conditions where these orientations could not be formed in case of DC bias.

Original language	English
Title of host publication	2010 IEEE International Ultrasonics Symposium, IUS 2010
Pages	1060-1063
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2010.5935655
Publication status	Published - 2010 Dec 1
Externally published	Yes
Event	2010 IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States Duration: 2010 Oct 11 → 2010 Oct 14

Publication series

Name	Proceedings - IEEE Ultrasonics Symposium
ISSN (Print)	1051-0117

Other

Other	2010 IEEE International Ultrasonics Symposium, IUS 2010
Country/Territory	United States
City	San Diego, CA
Period	10/10/11 → 10/10/14

Keywords

RF bias sputtering
c-axis parallel-oriented ZnO film
ion bombardment
shear mode device

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/ULTSYM.2010.5935655

Cite this

A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. / Takayanagi, Shinji; Yanagitani, Takahiko; Matsukawa, Mami et al.

2010 IEEE International Ultrasonics Symposium, IUS 2010. 2010. p. 1060-1063 5935655 (Proceedings - IEEE Ultrasonics Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takayanagi, S, Yanagitani, T, Matsukawa, M & Watanabe, Y 2010, A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. in 2010 IEEE International Ultrasonics Symposium, IUS 2010., 5935655, Proceedings - IEEE Ultrasonics Symposium, pp. 1060-1063, 2010 IEEE International Ultrasonics Symposium, IUS 2010, San Diego, CA, United States, 10/10/11. https://doi.org/10.1109/ULTSYM.2010.5935655

@inproceedings{f8117ddb08ed4997bef1d870cdd6f5cb,

title = "A simple technique for obtaining (11{\=2}0) or (10{\=1}0) textured ZnO films by RF bias sputtering",

abstract = "C-axis parallel-oriented ZnO piezoelectric films, (11{\=2}0) or (10{\=1}0) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (11{\=2}0) or (10{\=1}0) orientation. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (11{\=2}0) and (10{\=1}0) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. This method made possible to form preferential (11{\=2}0) or (10{\=1}0) orientation in the conditions where these orientations could not be formed in case of DC bias.",

keywords = "RF bias sputtering, c-axis parallel-oriented ZnO film, ion bombardment, shear mode device",

author = "Shinji Takayanagi and Takahiko Yanagitani and Mami Matsukawa and Yoshiaki Watanabe",

year = "2010",

month = dec,

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doi = "10.1109/ULTSYM.2010.5935655",

language = "English",

isbn = "9781457703829",

series = "Proceedings - IEEE Ultrasonics Symposium",

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AU - Takayanagi, Shinji

AU - Yanagitani, Takahiko

AU - Matsukawa, Mami

AU - Watanabe, Yoshiaki

PY - 2010/12/1

Y1 - 2010/12/1

N2 - C-axis parallel-oriented ZnO piezoelectric films, (112̄0) or (101̄0) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (112̄0) or (101̄0) orientation. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (112̄0) and (101̄0) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. This method made possible to form preferential (112̄0) or (101̄0) orientation in the conditions where these orientations could not be formed in case of DC bias.

AB - C-axis parallel-oriented ZnO piezoelectric films, (112̄0) or (101̄0) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (112̄0) or (101̄0) orientation. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (112̄0) and (101̄0) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. This method made possible to form preferential (112̄0) or (101̄0) orientation in the conditions where these orientations could not be formed in case of DC bias.

KW - RF bias sputtering

KW - c-axis parallel-oriented ZnO film

KW - ion bombardment

KW - shear mode device

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ER -

A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering

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