A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering

Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

C-axis parallel-oriented ZnO piezoelectric films, (112̄0) or (101̄0) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (112̄0) or (101̄0) orientation. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (112̄0) and (101̄0) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. This method made possible to form preferential (112̄0) or (101̄0) orientation in the conditions where these orientations could not be formed in case of DC bias.

Original languageEnglish
Title of host publicationProceedings - IEEE Ultrasonics Symposium
Pages1060-1063
Number of pages4
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States
Duration: 2010 Oct 112010 Oct 14

Other

Other2010 IEEE International Ultrasonics Symposium, IUS 2010
CountryUnited States
CitySan Diego, CA
Period10/10/1110/10/14

Fingerprint

bombardment
sputtering
ions
magnetron sputtering
direct current
shear
damage

Keywords

  • c-axis parallel-oriented ZnO film
  • ion bombardment
  • RF bias sputtering
  • shear mode device

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

Cite this

Takayanagi, S., Yanagitani, T., Matsukawa, M., & Watanabe, Y. (2010). A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. In Proceedings - IEEE Ultrasonics Symposium (pp. 1060-1063). [5935655] https://doi.org/10.1109/ULTSYM.2010.5935655

A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. / Takayanagi, Shinji; Yanagitani, Takahiko; Matsukawa, Mami; Watanabe, Yoshiaki.

Proceedings - IEEE Ultrasonics Symposium. 2010. p. 1060-1063 5935655.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takayanagi, S, Yanagitani, T, Matsukawa, M & Watanabe, Y 2010, A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. in Proceedings - IEEE Ultrasonics Symposium., 5935655, pp. 1060-1063, 2010 IEEE International Ultrasonics Symposium, IUS 2010, San Diego, CA, United States, 10/10/11. https://doi.org/10.1109/ULTSYM.2010.5935655
Takayanagi S, Yanagitani T, Matsukawa M, Watanabe Y. A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. In Proceedings - IEEE Ultrasonics Symposium. 2010. p. 1060-1063. 5935655 https://doi.org/10.1109/ULTSYM.2010.5935655
Takayanagi, Shinji ; Yanagitani, Takahiko ; Matsukawa, Mami ; Watanabe, Yoshiaki. / A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. Proceedings - IEEE Ultrasonics Symposium. 2010. pp. 1060-1063
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