A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering

Shinji Takayanagi, Takahiko Yanagitani, Mami Matsukawa, Yoshiaki Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

C-axis parallel-oriented ZnO piezoelectric films, (112̄0) or (101̄0) textured films, are good candidates for shear mode devices. Ion bombardment to the substrate during film deposition suppresses the usual (0001)-oriented grain growth, resulting in the preferential development of unusual (112̄0) or (101̄0) orientation. This is because the most densely packed (0001) plane should incur more damage by ion bombardment than the (112̄0) and (101̄0) planes. In this study, we propose RF substrate bias RF magnetron sputtering method to induce the ion bombardment to the substrate. This method made possible to form preferential (112̄0) or (101̄0) orientation in the conditions where these orientations could not be formed in case of DC bias.

Original languageEnglish
Title of host publication2010 IEEE International Ultrasonics Symposium, IUS 2010
Pages1060-1063
Number of pages4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Ultrasonics Symposium, IUS 2010 - San Diego, CA, United States
Duration: 2010 Oct 112010 Oct 14

Publication series

NameProceedings - IEEE Ultrasonics Symposium
ISSN (Print)1051-0117

Other

Other2010 IEEE International Ultrasonics Symposium, IUS 2010
CountryUnited States
CitySan Diego, CA
Period10/10/1110/10/14

Keywords

  • RF bias sputtering
  • c-axis parallel-oriented ZnO film
  • ion bombardment
  • shear mode device

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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    Takayanagi, S., Yanagitani, T., Matsukawa, M., & Watanabe, Y. (2010). A simple technique for obtaining (112̄0) or (101̄0) textured ZnO films by RF bias sputtering. In 2010 IEEE International Ultrasonics Symposium, IUS 2010 (pp. 1060-1063). [5935655] (Proceedings - IEEE Ultrasonics Symposium). https://doi.org/10.1109/ULTSYM.2010.5935655