A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET

Jun Pan, Yasuaki Inoue

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)

    Abstract

    A sub-1-V self-biased low-voltage low-power voltage reference is presented for micropower electronic applications. And the proposed circuit has very low temperature dependence by using a back-gate connection MOSFET. An Hspice simulation shows that the reference voltage and total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C within a temperature range from -40 to 100°C. The supply voltage dependence is -0.36 m V/V (Vdd=0.95-3.3 V). Supply voltage can be as low as 0.95 V in a standard CMOS 0.35 °m technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively.

    Original languageEnglish
    Title of host publication2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings
    Pages2314-2318
    Number of pages5
    Volume4
    DOIs
    Publication statusPublished - 2006
    Event2006 International Conference on Communications, Circuits and Systems, ICCCAS - Guilin
    Duration: 2006 Jun 252006 Jun 28

    Other

    Other2006 International Conference on Communications, Circuits and Systems, ICCCAS
    CityGuilin
    Period06/6/2506/6/28

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Pan, J., & Inoue, Y. (2006). A sub-1-V low-voltage low-power voltage referencewith a back-gate connection MOSFET. In 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings (Vol. 4, pp. 2314-2318). [4064387] https://doi.org/10.1109/ICCCAS.2006.285140