A Ta2O5 solid-electrolyte switch with improved reliability

Toshitsugu Sakamoto, Naoki Banno, Noriyuki Iguchi, Hisao Kawaura, Hiroshi Sunamura, Shinji Fujieda, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

64 Citations (Scopus)

Abstract

We present a novel solid-electrolyte switch ("NanoBridge") promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of CU2S with Ta2O5, which has a Siprocess compatibility, . As a result, we successfully control the turn-on voltage to adapt to CMOS operation. The Ta2O 5-NanoBridge exhibits a high reliability of cycling endurance (> 104) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.

Original languageEnglish
Title of host publicationDigest of Technical Papers - Symposium on VLSI Technology
Pages38-39
Number of pages2
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan
Duration: 2007 Jun 122007 Jun 14

Other

Other2007 Symposium on VLSI Technology, VLSIT 2007
CountryJapan
CityKyoto
Period07/6/1207/6/14

Fingerprint

Solid electrolytes
Switches
Field programmable gate arrays (FPGA)
Precipitates
Durability
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sakamoto, T., Banno, N., Iguchi, N., Kawaura, H., Sunamura, H., Fujieda, S., ... Aono, M. (2007). A Ta2O5 solid-electrolyte switch with improved reliability. In Digest of Technical Papers - Symposium on VLSI Technology (pp. 38-39). [4339718] https://doi.org/10.1109/VLSIT.2007.4339718

A Ta2O5 solid-electrolyte switch with improved reliability. / Sakamoto, Toshitsugu; Banno, Naoki; Iguchi, Noriyuki; Kawaura, Hisao; Sunamura, Hiroshi; Fujieda, Shinji; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu.

Digest of Technical Papers - Symposium on VLSI Technology. 2007. p. 38-39 4339718.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakamoto, T, Banno, N, Iguchi, N, Kawaura, H, Sunamura, H, Fujieda, S, Terabe, K, Hasegawa, T & Aono, M 2007, A Ta2O5 solid-electrolyte switch with improved reliability. in Digest of Technical Papers - Symposium on VLSI Technology., 4339718, pp. 38-39, 2007 Symposium on VLSI Technology, VLSIT 2007, Kyoto, Japan, 07/6/12. https://doi.org/10.1109/VLSIT.2007.4339718
Sakamoto T, Banno N, Iguchi N, Kawaura H, Sunamura H, Fujieda S et al. A Ta2O5 solid-electrolyte switch with improved reliability. In Digest of Technical Papers - Symposium on VLSI Technology. 2007. p. 38-39. 4339718 https://doi.org/10.1109/VLSIT.2007.4339718
Sakamoto, Toshitsugu ; Banno, Naoki ; Iguchi, Noriyuki ; Kawaura, Hisao ; Sunamura, Hiroshi ; Fujieda, Shinji ; Terabe, Kazuya ; Hasegawa, Tsuyoshi ; Aono, Masakazu. / A Ta2O5 solid-electrolyte switch with improved reliability. Digest of Technical Papers - Symposium on VLSI Technology. 2007. pp. 38-39
@inproceedings{c2e914a856914e9ba7571a39120b884e,
title = "A Ta2O5 solid-electrolyte switch with improved reliability",
abstract = "We present a novel solid-electrolyte switch ({"}NanoBridge{"}) promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of CU2S with Ta2O5, which has a Siprocess compatibility, . As a result, we successfully control the turn-on voltage to adapt to CMOS operation. The Ta2O 5-NanoBridge exhibits a high reliability of cycling endurance (> 104) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.",
author = "Toshitsugu Sakamoto and Naoki Banno and Noriyuki Iguchi and Hisao Kawaura and Hiroshi Sunamura and Shinji Fujieda and Kazuya Terabe and Tsuyoshi Hasegawa and Masakazu Aono",
year = "2007",
doi = "10.1109/VLSIT.2007.4339718",
language = "English",
pages = "38--39",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",

}

TY - GEN

T1 - A Ta2O5 solid-electrolyte switch with improved reliability

AU - Sakamoto, Toshitsugu

AU - Banno, Naoki

AU - Iguchi, Noriyuki

AU - Kawaura, Hisao

AU - Sunamura, Hiroshi

AU - Fujieda, Shinji

AU - Terabe, Kazuya

AU - Hasegawa, Tsuyoshi

AU - Aono, Masakazu

PY - 2007

Y1 - 2007

N2 - We present a novel solid-electrolyte switch ("NanoBridge") promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of CU2S with Ta2O5, which has a Siprocess compatibility, . As a result, we successfully control the turn-on voltage to adapt to CMOS operation. The Ta2O 5-NanoBridge exhibits a high reliability of cycling endurance (> 104) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.

AB - We present a novel solid-electrolyte switch ("NanoBridge") promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of CU2S with Ta2O5, which has a Siprocess compatibility, . As a result, we successfully control the turn-on voltage to adapt to CMOS operation. The Ta2O 5-NanoBridge exhibits a high reliability of cycling endurance (> 104) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.

UR - http://www.scopus.com/inward/record.url?scp=47249166433&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249166433&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2007.4339718

DO - 10.1109/VLSIT.2007.4339718

M3 - Conference contribution

SP - 38

EP - 39

BT - Digest of Technical Papers - Symposium on VLSI Technology

ER -