A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions (STT-MTJs) is proposed that is smaller than the conventional ones with equivalent performance. The power supply voltage dependence of the area for the two-NFET bootstrap type selective device that can switch MTJs within 10 ns is compared with those of the conventional single-NFET, single-PFET, and CMOS type selective devices with the same performance in 90nm technology node. It is found that the two-NFET bootstrap type selective device can be smaller than the conventional ones especially for the power supply voltage equal to or lower than 0.9V. The two-NFET bootstrap type selective device is shown to maintain scalability to 32nm node just like the CMOS one, while the conventional single-NFET and single-PFET selective devices fail to be scaled properly. This selective device can be applied to every high-performance MOS/MTJ hybrid circuit for increasing the integration density.

Original languageEnglish
Article number04ED03
JournalJapanese journal of applied physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - 2014 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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