A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions (STT-MTJs) is proposed that is smaller than the conventional ones with equivalent performance. The power supply voltage dependence of the area for the two-NFET bootstrap type selective device that can switch MTJs within 10 ns is compared with those of the conventional single-NFET, single-PFET, and CMOS type selective devices with the same performance in 90nm technology node. It is found that the two-NFET bootstrap type selective device can be smaller than the conventional ones especially for the power supply voltage equal to or lower than 0.9V. The two-NFET bootstrap type selective device is shown to maintain scalability to 32nm node just like the CMOS one, while the conventional single-NFET and single-PFET selective devices fail to be scaled properly. This selective device can be applied to every high-performance MOS/MTJ hybrid circuit for increasing the integration density.

Original languageEnglish
Article number04ED03
JournalJapanese Journal of Applied Physics
Volume53
Issue number4 SPEC. ISSUE
DOIs
Publication statusPublished - 2014
Externally publishedYes

Fingerprint

Tunnel junctions
tunnel junctions
torque
Transistors
transistors
Torque
Electric potential
Scalability
Switches
Networks (circuits)
power supplies
CMOS
hybrid circuits
electric potential

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions. / Ohsawa, Takashi; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo.

In: Japanese Journal of Applied Physics, Vol. 53, No. 4 SPEC. ISSUE, 04ED03, 2014.

Research output: Contribution to journalArticle

Ohsawa, Takashi ; Ikeda, Shoji ; Hanyu, Takahiro ; Ohno, Hideo ; Endoh, Tetsuo. / A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions. In: Japanese Journal of Applied Physics. 2014 ; Vol. 53, No. 4 SPEC. ISSUE.
@article{dab7aefaa8fa40b6851d13e7cf465a6f,
title = "A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions",
abstract = "Two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions (STT-MTJs) is proposed that is smaller than the conventional ones with equivalent performance. The power supply voltage dependence of the area for the two-NFET bootstrap type selective device that can switch MTJs within 10 ns is compared with those of the conventional single-NFET, single-PFET, and CMOS type selective devices with the same performance in 90nm technology node. It is found that the two-NFET bootstrap type selective device can be smaller than the conventional ones especially for the power supply voltage equal to or lower than 0.9V. The two-NFET bootstrap type selective device is shown to maintain scalability to 32nm node just like the CMOS one, while the conventional single-NFET and single-PFET selective devices fail to be scaled properly. This selective device can be applied to every high-performance MOS/MTJ hybrid circuit for increasing the integration density.",
author = "Takashi Ohsawa and Shoji Ikeda and Takahiro Hanyu and Hideo Ohno and Tetsuo Endoh",
year = "2014",
doi = "10.7567/JJAP.53.04ED03",
language = "English",
volume = "53",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 SPEC. ISSUE",

}

TY - JOUR

T1 - A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

AU - Ohsawa, Takashi

AU - Ikeda, Shoji

AU - Hanyu, Takahiro

AU - Ohno, Hideo

AU - Endoh, Tetsuo

PY - 2014

Y1 - 2014

N2 - Two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions (STT-MTJs) is proposed that is smaller than the conventional ones with equivalent performance. The power supply voltage dependence of the area for the two-NFET bootstrap type selective device that can switch MTJs within 10 ns is compared with those of the conventional single-NFET, single-PFET, and CMOS type selective devices with the same performance in 90nm technology node. It is found that the two-NFET bootstrap type selective device can be smaller than the conventional ones especially for the power supply voltage equal to or lower than 0.9V. The two-NFET bootstrap type selective device is shown to maintain scalability to 32nm node just like the CMOS one, while the conventional single-NFET and single-PFET selective devices fail to be scaled properly. This selective device can be applied to every high-performance MOS/MTJ hybrid circuit for increasing the integration density.

AB - Two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions (STT-MTJs) is proposed that is smaller than the conventional ones with equivalent performance. The power supply voltage dependence of the area for the two-NFET bootstrap type selective device that can switch MTJs within 10 ns is compared with those of the conventional single-NFET, single-PFET, and CMOS type selective devices with the same performance in 90nm technology node. It is found that the two-NFET bootstrap type selective device can be smaller than the conventional ones especially for the power supply voltage equal to or lower than 0.9V. The two-NFET bootstrap type selective device is shown to maintain scalability to 32nm node just like the CMOS one, while the conventional single-NFET and single-PFET selective devices fail to be scaled properly. This selective device can be applied to every high-performance MOS/MTJ hybrid circuit for increasing the integration density.

UR - http://www.scopus.com/inward/record.url?scp=84903300382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903300382&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.04ED03

DO - 10.7567/JJAP.53.04ED03

M3 - Article

AN - SCOPUS:84903300382

VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 SPEC. ISSUE

M1 - 04ED03

ER -