A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN

Toshiki Makimoto, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We have successfully released an InGaN/GaN light-emitting diode (LED) from a sapphire growth substrate and transferred it to a piece of commercially available adhesive tape using a mechanical transfer method called "MeTRe" (Mechanical Transfer using a Release layer). By this method, a 3-nm-thick hexagonal BN (h-BN) layer inserted between the sapphire substrate and the GaN-based layer acts as both a buffer layer for the growth of a high-quality GaN-based layer and a release layer in the transfer process. A very thin (<0.1 mm) vertical LED prototype wrapped with two pieces of adhesive tape emitted violet-blue light.

Original languageEnglish
Article number072102
JournalApplied Physics Express
Volume5
Issue number7
DOIs
Publication statusPublished - 2012 Jul
Externally publishedYes

Fingerprint

Sapphire
Tapes
Light emitting diodes
Adhesives
light emitting diodes
Substrates
Buffer layers
adhesives
tapes
sapphire
buffers
prototypes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN. / Makimoto, Toshiki; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Yamamoto, Hideki.

In: Applied Physics Express, Vol. 5, No. 7, 072102, 07.2012.

Research output: Contribution to journalArticle

Makimoto, Toshiki ; Kumakura, Kazuhide ; Kobayashi, Yasuyuki ; Akasaka, Tetsuya ; Yamamoto, Hideki. / A vertical InGaN/GaN light-emitting diode fabricated on a flexible substrate by a mechanical transfer method using BN. In: Applied Physics Express. 2012 ; Vol. 5, No. 7.
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