A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen; Y. Zhuang; Katsuyuki Utaka; Ya Yun Liu; Amnon Yariv

doi:10.1109/JQE.1987.1073402

A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

T. R. Chen^*, Y. Zhuang, Katsuyuki Utaka, Ya Yun Liu, Amnon Yariv

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

Original language	English
Pages (from-to)	919-924
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	23
Issue number	6
DOIs	https://doi.org/10.1109/JQE.1987.1073402
Publication status	Published - 1987 Jun
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.1987.1073402

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abstract = "A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.",

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AU - Liu, Ya Yun

AU - Yariv, Amnon

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AB - A DH InGaAsP/InP mesa laser and a DH InGaAsP/InP mass-transport laser were successfully put together wIth an InGaAsP/InP heterojunction bipolar transistor in a vertical configuration. A laser threshold current as low as 17 mA and an output laser power of over 30 mW were achieved. Base injection current-controlled optical bistability and optical switching were demonstrated.

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A Vertical Monolithic Combination of an InGaAsP/InP Laser and a Heterojunction Bipolar Transistor

Abstract

ASJC Scopus subject areas

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