A wide-energy-gap naphthalene-based liquid organic semiconductor host for liquid deep-blue organic light-emitting diodes

Naofumi Kobayashi, Hiroyuki Kuwae, Juro Oshima, Ryoichi Ishimatsu, Shuya Tashiro, Toshihiko Imato, Chihaya Adachi, Shuichi Shoji, Jun Mizuno

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We developed a novel naphthalene derivative to function as a wide-energy-gap liquid organic semiconductor (LOS) host material for the limited range of liquid deep-blue light-emitting materials that have been developed to date. The naphthalene derivative 1-naphthaleneacetic acid 2-ethylhexyl ester (NLQ), which shows a low viscosity of 20 mPa·s at 25 °C, was synthesized as a LOS by introducing an ethylhexyl group into naphthalene. We doped 9,10-diphenylanthracene (DPA) into NLQ as a guest deep-blue dye. The highest occupied molecular orbital (HOMO) energy level of NLQ was estimated to be − 6.40 eV from photoelectron spectroscopy measurements in air. The energy gap of NLQ was estimated to be 4.08 eV from its absorption spectrum, indicating that NLQ has the widest energy gap of any such host material to date. The lowest unoccupied molecular orbital energy level of NLQ was calculated to be − 2.31 eV. Deep-blue electroluminescence emission in a liquid state was obtained by doping DPA into NLQ. Light emission could be achieved by a combination of Förster resonance energy transfer and direct recombination of trapped holes and electrons because the energy gap of DPA is straddled by the wider energy gap of NLQ.

Original languageEnglish
Pages (from-to)19-23
Number of pages5
JournalJournal of Luminescence
Volume200
DOIs
Publication statusPublished - 2018 Aug 1

Fingerprint

Semiconductors
Semiconducting organic compounds
Organic light emitting diodes (OLED)
organic semiconductors
naphthalene
Energy gap
light emitting diodes
Light
Liquids
liquids
Molecular orbitals
Photoelectron Spectroscopy
Energy Transfer
Electron energy levels
molecular orbitals
Viscosity
Genetic Recombination
energy levels
Esters
Derivatives

Keywords

  • Liquid organic light-emitting diode
  • Liquid organic semiconductor
  • Naphthalene-derivative
  • Wide-energy-gap

ASJC Scopus subject areas

  • Biophysics
  • Atomic and Molecular Physics, and Optics
  • Chemistry(all)
  • Biochemistry
  • Condensed Matter Physics

Cite this

A wide-energy-gap naphthalene-based liquid organic semiconductor host for liquid deep-blue organic light-emitting diodes. / Kobayashi, Naofumi; Kuwae, Hiroyuki; Oshima, Juro; Ishimatsu, Ryoichi; Tashiro, Shuya; Imato, Toshihiko; Adachi, Chihaya; Shoji, Shuichi; Mizuno, Jun.

In: Journal of Luminescence, Vol. 200, 01.08.2018, p. 19-23.

Research output: Contribution to journalArticle

Kobayashi, Naofumi ; Kuwae, Hiroyuki ; Oshima, Juro ; Ishimatsu, Ryoichi ; Tashiro, Shuya ; Imato, Toshihiko ; Adachi, Chihaya ; Shoji, Shuichi ; Mizuno, Jun. / A wide-energy-gap naphthalene-based liquid organic semiconductor host for liquid deep-blue organic light-emitting diodes. In: Journal of Luminescence. 2018 ; Vol. 200. pp. 19-23.
@article{4aa0ca63dd67490dbcf4c532f7db891e,
title = "A wide-energy-gap naphthalene-based liquid organic semiconductor host for liquid deep-blue organic light-emitting diodes",
abstract = "We developed a novel naphthalene derivative to function as a wide-energy-gap liquid organic semiconductor (LOS) host material for the limited range of liquid deep-blue light-emitting materials that have been developed to date. The naphthalene derivative 1-naphthaleneacetic acid 2-ethylhexyl ester (NLQ), which shows a low viscosity of 20 mPa·s at 25 °C, was synthesized as a LOS by introducing an ethylhexyl group into naphthalene. We doped 9,10-diphenylanthracene (DPA) into NLQ as a guest deep-blue dye. The highest occupied molecular orbital (HOMO) energy level of NLQ was estimated to be − 6.40 eV from photoelectron spectroscopy measurements in air. The energy gap of NLQ was estimated to be 4.08 eV from its absorption spectrum, indicating that NLQ has the widest energy gap of any such host material to date. The lowest unoccupied molecular orbital energy level of NLQ was calculated to be − 2.31 eV. Deep-blue electroluminescence emission in a liquid state was obtained by doping DPA into NLQ. Light emission could be achieved by a combination of F{\"o}rster resonance energy transfer and direct recombination of trapped holes and electrons because the energy gap of DPA is straddled by the wider energy gap of NLQ.",
keywords = "Liquid organic light-emitting diode, Liquid organic semiconductor, Naphthalene-derivative, Wide-energy-gap",
author = "Naofumi Kobayashi and Hiroyuki Kuwae and Juro Oshima and Ryoichi Ishimatsu and Shuya Tashiro and Toshihiko Imato and Chihaya Adachi and Shuichi Shoji and Jun Mizuno",
year = "2018",
month = "8",
day = "1",
doi = "10.1016/j.jlumin.2018.03.072",
language = "English",
volume = "200",
pages = "19--23",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",

}

TY - JOUR

T1 - A wide-energy-gap naphthalene-based liquid organic semiconductor host for liquid deep-blue organic light-emitting diodes

AU - Kobayashi, Naofumi

AU - Kuwae, Hiroyuki

AU - Oshima, Juro

AU - Ishimatsu, Ryoichi

AU - Tashiro, Shuya

AU - Imato, Toshihiko

AU - Adachi, Chihaya

AU - Shoji, Shuichi

AU - Mizuno, Jun

PY - 2018/8/1

Y1 - 2018/8/1

N2 - We developed a novel naphthalene derivative to function as a wide-energy-gap liquid organic semiconductor (LOS) host material for the limited range of liquid deep-blue light-emitting materials that have been developed to date. The naphthalene derivative 1-naphthaleneacetic acid 2-ethylhexyl ester (NLQ), which shows a low viscosity of 20 mPa·s at 25 °C, was synthesized as a LOS by introducing an ethylhexyl group into naphthalene. We doped 9,10-diphenylanthracene (DPA) into NLQ as a guest deep-blue dye. The highest occupied molecular orbital (HOMO) energy level of NLQ was estimated to be − 6.40 eV from photoelectron spectroscopy measurements in air. The energy gap of NLQ was estimated to be 4.08 eV from its absorption spectrum, indicating that NLQ has the widest energy gap of any such host material to date. The lowest unoccupied molecular orbital energy level of NLQ was calculated to be − 2.31 eV. Deep-blue electroluminescence emission in a liquid state was obtained by doping DPA into NLQ. Light emission could be achieved by a combination of Förster resonance energy transfer and direct recombination of trapped holes and electrons because the energy gap of DPA is straddled by the wider energy gap of NLQ.

AB - We developed a novel naphthalene derivative to function as a wide-energy-gap liquid organic semiconductor (LOS) host material for the limited range of liquid deep-blue light-emitting materials that have been developed to date. The naphthalene derivative 1-naphthaleneacetic acid 2-ethylhexyl ester (NLQ), which shows a low viscosity of 20 mPa·s at 25 °C, was synthesized as a LOS by introducing an ethylhexyl group into naphthalene. We doped 9,10-diphenylanthracene (DPA) into NLQ as a guest deep-blue dye. The highest occupied molecular orbital (HOMO) energy level of NLQ was estimated to be − 6.40 eV from photoelectron spectroscopy measurements in air. The energy gap of NLQ was estimated to be 4.08 eV from its absorption spectrum, indicating that NLQ has the widest energy gap of any such host material to date. The lowest unoccupied molecular orbital energy level of NLQ was calculated to be − 2.31 eV. Deep-blue electroluminescence emission in a liquid state was obtained by doping DPA into NLQ. Light emission could be achieved by a combination of Förster resonance energy transfer and direct recombination of trapped holes and electrons because the energy gap of DPA is straddled by the wider energy gap of NLQ.

KW - Liquid organic light-emitting diode

KW - Liquid organic semiconductor

KW - Naphthalene-derivative

KW - Wide-energy-gap

UR - http://www.scopus.com/inward/record.url?scp=85044994557&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85044994557&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2018.03.072

DO - 10.1016/j.jlumin.2018.03.072

M3 - Article

VL - 200

SP - 19

EP - 23

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -