Acceptor concentration control of p-ZnSe nitrogen and helium mixed gas plasma

Hiroyuki Tosaka, Tsuyoshi Nagatake, Takashi Yoshida, Masakazu Kobayashi, Akihito Yoshikawa

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration can be controlled from 6 × 1015 to 7 × 1017 cm-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf-power. p-ZnSe layers grown with this technique was used for blue-green laser structures. Lasing was observed at 77 K under pulse operation.

Original languageEnglish
Pages (from-to)1722-1724
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume32
Issue number12 A
Publication statusPublished - 1993 Jan 1
Externally publishedYes

Fingerprint

Helium
helium
Nitrogen
Plasmas
nitrogen
Gases
gases
Nitrogen plasma
nitrogen plasma
mixing ratios
lasing
Doping (additives)
Lasers
pulses
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Acceptor concentration control of p-ZnSe nitrogen and helium mixed gas plasma. / Tosaka, Hiroyuki; Nagatake, Tsuyoshi; Yoshida, Takashi; Kobayashi, Masakazu; Yoshikawa, Akihito.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 32, No. 12 A, 01.01.1993, p. 1722-1724.

Research output: Contribution to journalArticle

Tosaka, Hiroyuki ; Nagatake, Tsuyoshi ; Yoshida, Takashi ; Kobayashi, Masakazu ; Yoshikawa, Akihito. / Acceptor concentration control of p-ZnSe nitrogen and helium mixed gas plasma. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1993 ; Vol. 32, No. 12 A. pp. 1722-1724.
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