Acceptor concentration control of p-ZnSe using N 2+He gas plasma by molecular beam epitaxy

Masakazu Kobayashi, Akihiko Yoshikawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6×10 16 to 7×10 17 cm -3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×10 17 cm -3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N 2 and He gas mixing ratio.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages437-445
Number of pages9
Volume340
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the MRS Symposium - San Francisco, CA, USA
Duration: 1994 Apr 41994 Apr 7

Other

OtherProceedings of the MRS Symposium
CitySan Francisco, CA, USA
Period94/4/494/4/7

Fingerprint

Plasma Gases
Molecular beam epitaxy
Gases
Plasmas
Nitrogen
Nitrogen plasma
Helium
Doping (additives)
Spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kobayashi, M., & Yoshikawa, A. (1994). Acceptor concentration control of p-ZnSe using N 2+He gas plasma by molecular beam epitaxy In Materials Research Society Symposium - Proceedings (Vol. 340, pp. 437-445). Materials Research Society.

Acceptor concentration control of p-ZnSe using N 2+He gas plasma by molecular beam epitaxy . / Kobayashi, Masakazu; Yoshikawa, Akihiko.

Materials Research Society Symposium - Proceedings. Vol. 340 Materials Research Society, 1994. p. 437-445.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kobayashi, M & Yoshikawa, A 1994, Acceptor concentration control of p-ZnSe using N 2+He gas plasma by molecular beam epitaxy in Materials Research Society Symposium - Proceedings. vol. 340, Materials Research Society, pp. 437-445, Proceedings of the MRS Symposium, San Francisco, CA, USA, 94/4/4.
Kobayashi M, Yoshikawa A. Acceptor concentration control of p-ZnSe using N 2+He gas plasma by molecular beam epitaxy In Materials Research Society Symposium - Proceedings. Vol. 340. Materials Research Society. 1994. p. 437-445
Kobayashi, Masakazu ; Yoshikawa, Akihiko. / Acceptor concentration control of p-ZnSe using N 2+He gas plasma by molecular beam epitaxy Materials Research Society Symposium - Proceedings. Vol. 340 Materials Research Society, 1994. pp. 437-445
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