Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma

Hiroyuki Tosaka, Tsuyoshi Nagatake, Takashi Yoshida, Masakazu Kobayashi, Akihiko Yoshikawa

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Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration can be controlled from 6 x 1016to 7 x 1017cm-3while films doped using the nitrogen plasma exhibited the acceptor concentration of 3 x 1017cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. p-ZnSe layers grown with this technique were used for blue-green laser structures. Lasing was observed at 77 K under pulse operation.

Original languageEnglish
Pages (from-to)L1722-L1724
JournalJapanese journal of applied physics
Issue number12 A
Publication statusPublished - 1993 Dec



  • Capacitance-voltage measurement
  • Doping
  • Helium gas
  • Laser diode
  • Photoluminescence
  • Plasma
  • ZnSe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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