Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma

Hiroyuki Tosaka; Tsuyoshi Nagatake; Takashi Yoshida; Masakazu Kobayashi; Akihiko Yoshikawa

doi:10.1143/JJAP.32.L1722

Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma

Hiroyuki Tosaka, Tsuyoshi Nagatake, Takashi Yoshida, Masakazu Kobayashi, Akihiko Yoshikawa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration can be controlled from 6 x 10¹⁶to 7 x 10¹⁷cm^-3while films doped using the nitrogen plasma exhibited the acceptor concentration of 3 x 10¹⁷cm^-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. p-ZnSe layers grown with this technique were used for blue-green laser structures. Lasing was observed at 77 K under pulse operation.

Original language	English
Pages (from-to)	L1722-L1724
Journal	Japanese journal of applied physics
Volume	32
Issue number	12 A
DOIs	https://doi.org/10.1143/JJAP.32.L1722
Publication status	Published - 1993 Dec
Externally published	Yes

Keywords

Capacitance-voltage measurement
Doping
Helium gas
Laser diode
Photoluminescence
Plasma
ZnSe

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.32.L1722

Cite this

@article{3e196052f4bf486a95d89af99f729183,

title = "Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma",

abstract = "Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration can be controlled from 6 x 1016to 7 x 1017cm-3while films doped using the nitrogen plasma exhibited the acceptor concentration of 3 x 1017cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. p-ZnSe layers grown with this technique were used for blue-green laser structures. Lasing was observed at 77 K under pulse operation.",

keywords = "Capacitance-voltage measurement, Doping, Helium gas, Laser diode, Photoluminescence, Plasma, ZnSe",

author = "Hiroyuki Tosaka and Tsuyoshi Nagatake and Takashi Yoshida and Masakazu Kobayashi and Akihiko Yoshikawa",

year = "1993",

month = dec,

doi = "10.1143/JJAP.32.L1722",

language = "English",

volume = "32",

pages = "L1722--L1724",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12 A",

}

TY - JOUR

T1 - Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma

AU - Tosaka, Hiroyuki

AU - Nagatake, Tsuyoshi

AU - Yoshida, Takashi

AU - Kobayashi, Masakazu

AU - Yoshikawa, Akihiko

PY - 1993/12

Y1 - 1993/12

N2 - Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration can be controlled from 6 x 1016to 7 x 1017cm-3while films doped using the nitrogen plasma exhibited the acceptor concentration of 3 x 1017cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. p-ZnSe layers grown with this technique were used for blue-green laser structures. Lasing was observed at 77 K under pulse operation.

AB - Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration can be controlled from 6 x 1016to 7 x 1017cm-3while films doped using the nitrogen plasma exhibited the acceptor concentration of 3 x 1017cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. p-ZnSe layers grown with this technique were used for blue-green laser structures. Lasing was observed at 77 K under pulse operation.

KW - Capacitance-voltage measurement

KW - Doping

KW - Helium gas

KW - Laser diode

KW - Photoluminescence

KW - Plasma

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=0027347940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027347940&partnerID=8YFLogxK

U2 - 10.1143/JJAP.32.L1722

DO - 10.1143/JJAP.32.L1722

M3 - Article

AN - SCOPUS:0027347940

SN - 0021-4922

VL - 32

SP - L1722-L1724

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 12 A

ER -

Acceptor concentration control of p-znse using nitrogen and helium mixed gas plasma

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this