Acceptor concentration control of p-ZnSe using N2+He gas plasma by molecular beam epitaxy

Masakazu Kobayashi; Akihiko Yoshikawa

Acceptor concentration control of p-ZnSe using N₂+He gas plasma by molecular beam epitaxy

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6×10¹⁶ to 7×10¹⁷ cm^-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×10¹⁷ cm^-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N₂ and He gas mixing ratio.

Original language	English
Pages (from-to)	437-445
Number of pages	9
Journal	Materials Research Society Symposium - Proceedings
Volume	340
Publication status	Published - 1994 Dec 1
Externally published	Yes
Event	Proceedings of the MRS Symposium - San Francisco, CA, USA Duration: 1994 Apr 4 → 1994 Apr 7

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Acceptor concentration control of p-ZnSe using N2+He gas plasma by molecular beam epitaxy",

abstract = "Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6×1016 to 7×1017 cm-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N2 and He gas mixing ratio.",

author = "Masakazu Kobayashi and Akihiko Yoshikawa",

year = "1994",

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language = "English",

volume = "340",

pages = "437--445",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Proceedings of the MRS Symposium ; Conference date: 04-04-1994 Through 07-04-1994",

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TY - JOUR

T1 - Acceptor concentration control of p-ZnSe using N2+He gas plasma by molecular beam epitaxy

AU - Kobayashi, Masakazu

AU - Yoshikawa, Akihiko

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6×1016 to 7×1017 cm-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N2 and He gas mixing ratio.

AB - Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6×1016 to 7×1017 cm-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N2 and He gas mixing ratio.

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M3 - Conference article

AN - SCOPUS:0028591426

SN - 0272-9172

VL - 340

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the MRS Symposium

Y2 - 4 April 1994 through 7 April 1994

ER -

Acceptor concentration control of p-ZnSe using N₂+He gas plasma by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

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