Acceptor concentration control of p-ZnSe using N2+He gas plasma by molecular beam epitaxy

Masakazu Kobayashi, Akihiko Yoshikawa

Research output: Contribution to journalConference article

Abstract

Nitrogen and helium mixed gas plasma was used to grow p-ZnSe. Using the mixed gas, the acceptor concentration could be controlled from 6×1016 to 7×1017 cm-3 while films doped using the nitrogen plasma exhibited the acceptor concentration of 3×1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the rf power. Plasma spectroscopy was used to characterize the variety of the species in the plasma. Although the variety of the nitrogen related peaks in the spectrum were not significantly affected by the gas mixing, several peaks (for example 745nm and 825nm) showed intensity variation that was similar to the acceptor concentration variation with respect to the N2 and He gas mixing ratio.

Original languageEnglish
Pages (from-to)437-445
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume340
Publication statusPublished - 1994 Dec 1
EventProceedings of the MRS Symposium - San Francisco, CA, USA
Duration: 1994 Apr 41994 Apr 7

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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