ACCESS TIME ANALYSIS OF DYNAMIC MOS RAM.

Yasuji Nagayama, Koichiro Mashiko, Tsutomu Yoshihara, Takao Nakano

Research output: Contribution to journalArticle

Abstract

In this paper, to propose a model for access time analysis to achieve a high-speed access time, a signal path which determines the access time of dynamic MOS RAM has been analyzed and the technical issues necessary for high speed are examined. Further, based on the analysis of basic clock delay times and the sensing time, an access time analysis model is proposed. Using this model the sensitivity analysis for high-speed dynamic MOS RAM is performed, and the guidelines are given to realize high-speed dynamic MOS RAM.

Original languageEnglish
Pages (from-to)107-116
Number of pages10
JournalElectronics & communications in Japan
Volume66
Issue number5
Publication statusPublished - 1983 May
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nagayama, Y., Mashiko, K., Yoshihara, T., & Nakano, T. (1983). ACCESS TIME ANALYSIS OF DYNAMIC MOS RAM. Electronics & communications in Japan, 66(5), 107-116.