Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies

Yaqi Shang, Takashi Ohsawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, readout scheme in ReRAM crossbar array based on sneak current compensation is introduced. This scheme consists of two cycles. In the first measurement cycle, an accurate sneak current is measured which is dependent on the data storage patterns of the crossbar arrays in which the selector ON/OFF ratio is not large enough. In the second cycle, the measured sneak current is subtracted from the total bit line current to predict the cell current accurately. To make the measured sneak current accurate, the crossbar array is divided into many blocks only in one direction so that the impact of array size increase is minimal. The scheme is validated by using HSPICE.

Original languageEnglish
Title of host publication2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728109428
DOIs
Publication statusPublished - 2019 Apr 1
Event2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan, Province of China
Duration: 2019 Apr 222019 Apr 25

Publication series

Name2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
CountryTaiwan, Province of China
CityHsinchu
Period19/4/2219/4/25

Fingerprint

Data storage equipment
Compensation and Redress
RRAM
Direction compound

Keywords

  • compensation
  • data storage pattern dependency
  • Reram CBA
  • sneak current

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Shang, Y., & Ohsawa, T. (2019). Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 [8804668] (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2019.8804668

Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies. / Shang, Yaqi; Ohsawa, Takashi.

2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8804668 (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shang, Y & Ohsawa, T 2019, Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies. in 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019., 8804668, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Institute of Electrical and Electronics Engineers Inc., 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Hsinchu, Taiwan, Province of China, 19/4/22. https://doi.org/10.1109/VLSI-TSA.2019.8804668
Shang Y, Ohsawa T. Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8804668. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). https://doi.org/10.1109/VLSI-TSA.2019.8804668
Shang, Yaqi ; Ohsawa, Takashi. / Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies. 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).
@inproceedings{69662a41746c4d8bbd10faea90bb26f2,
title = "Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies",
abstract = "In this paper, readout scheme in ReRAM crossbar array based on sneak current compensation is introduced. This scheme consists of two cycles. In the first measurement cycle, an accurate sneak current is measured which is dependent on the data storage patterns of the crossbar arrays in which the selector ON/OFF ratio is not large enough. In the second cycle, the measured sneak current is subtracted from the total bit line current to predict the cell current accurately. To make the measured sneak current accurate, the crossbar array is divided into many blocks only in one direction so that the impact of array size increase is minimal. The scheme is validated by using HSPICE.",
keywords = "compensation, data storage pattern dependency, Reram CBA, sneak current",
author = "Yaqi Shang and Takashi Ohsawa",
year = "2019",
month = "4",
day = "1",
doi = "10.1109/VLSI-TSA.2019.8804668",
language = "English",
series = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",

}

TY - GEN

T1 - Accurate measurement of sneak current in reram crossbar array with data storage pattern dependencies

AU - Shang, Yaqi

AU - Ohsawa, Takashi

PY - 2019/4/1

Y1 - 2019/4/1

N2 - In this paper, readout scheme in ReRAM crossbar array based on sneak current compensation is introduced. This scheme consists of two cycles. In the first measurement cycle, an accurate sneak current is measured which is dependent on the data storage patterns of the crossbar arrays in which the selector ON/OFF ratio is not large enough. In the second cycle, the measured sneak current is subtracted from the total bit line current to predict the cell current accurately. To make the measured sneak current accurate, the crossbar array is divided into many blocks only in one direction so that the impact of array size increase is minimal. The scheme is validated by using HSPICE.

AB - In this paper, readout scheme in ReRAM crossbar array based on sneak current compensation is introduced. This scheme consists of two cycles. In the first measurement cycle, an accurate sneak current is measured which is dependent on the data storage patterns of the crossbar arrays in which the selector ON/OFF ratio is not large enough. In the second cycle, the measured sneak current is subtracted from the total bit line current to predict the cell current accurately. To make the measured sneak current accurate, the crossbar array is divided into many blocks only in one direction so that the impact of array size increase is minimal. The scheme is validated by using HSPICE.

KW - compensation

KW - data storage pattern dependency

KW - Reram CBA

KW - sneak current

UR - http://www.scopus.com/inward/record.url?scp=85072132511&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072132511&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2019.8804668

DO - 10.1109/VLSI-TSA.2019.8804668

M3 - Conference contribution

AN - SCOPUS:85072132511

T3 - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

BT - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -