Acoustic properties of heavily doped many-valley semiconductors in the weak-localization regime

T. Sota, K. Suzuki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have derived expressions for the ultrasonic attenuation coefficient and the sound-velocity change v of heavily doped many-valley semiconductors at low frequencies in the weak-localization regime where any intervalley scattering strength has been taken into account. Quantum corrections due to the effect of localization give a negative contribution to and v and are insensitive to temperature provided that the intervalley scattering time is independent of temperature, while those due to the effect of mutual interaction give a positive contribution to and v and decrease with increasing temperature. The whole behavior of and v, the deviations from classical form for the attenuation coefficient and the sound-velocity change, are determined by the competition between the effects of localization and the effects of mutual interaction mentioned above. The magnitude of and v increase with decreasing intervalley scattering strength. For comparison, expressions for and v in heavily doped single-valley semiconductors have also been derived. The sign of the quantum corrections to and v is the same as that to the electrical conductivity in the many-valley case but opposite in the single-valley case.

Original languageEnglish
Pages (from-to)8458-8467
Number of pages10
JournalPhysical Review B
Volume33
Issue number12
DOIs
Publication statusPublished - 1986 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Acoustic properties of heavily doped many-valley semiconductors in the weak-localization regime'. Together they form a unique fingerprint.

  • Cite this