Acoustic properties of heavily doped many-valley semiconductors in the weak-localization regime

Takayuki Sota, K. Suzuki

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    We have derived expressions for the ultrasonic attenuation coefficient and the sound-velocity change v of heavily doped many-valley semiconductors at low frequencies in the weak-localization regime where any intervalley scattering strength has been taken into account. Quantum corrections due to the effect of localization give a negative contribution to and v and are insensitive to temperature provided that the intervalley scattering time is independent of temperature, while those due to the effect of mutual interaction give a positive contribution to and v and decrease with increasing temperature. The whole behavior of and v, the deviations from classical form for the attenuation coefficient and the sound-velocity change, are determined by the competition between the effects of localization and the effects of mutual interaction mentioned above. The magnitude of and v increase with decreasing intervalley scattering strength. For comparison, expressions for and v in heavily doped single-valley semiconductors have also been derived. The sign of the quantum corrections to and v is the same as that to the electrical conductivity in the many-valley case but opposite in the single-valley case.

    Original languageEnglish
    Pages (from-to)8458-8467
    Number of pages10
    JournalPhysical Review B
    Volume33
    Issue number12
    DOIs
    Publication statusPublished - 1986

    Fingerprint

    Acoustic properties
    acoustic properties
    valleys
    Acoustic wave velocity
    Scattering
    Semiconductor materials
    attenuation coefficients
    acoustic velocity
    scattering
    Temperature
    Ultrasonics
    temperature
    ultrasonics
    interactions
    low frequencies
    deviation
    electrical resistivity

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Acoustic properties of heavily doped many-valley semiconductors in the weak-localization regime. / Sota, Takayuki; Suzuki, K.

    In: Physical Review B, Vol. 33, No. 12, 1986, p. 8458-8467.

    Research output: Contribution to journalArticle

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