Activation of a particulate Ta 3 N 5 water-oxidation photoanode with a GaN hole-blocking layer

Yusuke Asakura, Tomohiro Higashi, Hiroshi Nishiyama, Hiroyuki Kobayashi, Mamiko Nakabayashi, Naoya Shibata, Tsutomu Minegishi, Takashi Hisatomi, Masao Katayama, Taro Yamada, Kazunari Domen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Particulate Ta 3 N 5 , a material that responds to visible light for photoelectrochemical O 2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta 3 N 5 to the back-contact metal layer and prevented hole-electron recombination.

Original languageEnglish
Pages (from-to)73-78
Number of pages6
JournalSustainable Energy and Fuels
Issue number1
Publication statusPublished - 2018
Externally publishedYes

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Energy Engineering and Power Technology


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