Activation properties of schottky CdTe diodes irradiated by 150 MeV protons

Mio M. Murakami, Yoshihito Kobayashi, Motohide Kokubun, Isao Takahashi, Yuu Okada, Madoka Kawaharada, Kazuhiro Nakazawa, Shin Watanabe, Goro Sato, Manabu Kouda, Takefumi Mitani, Tadayuki Takahashi, Masaya Suzuki, Makoto Tashiro, Satoshi Kawasoe, Masaharu Nomachi, Kazuo Makishima

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.

    Original languageEnglish
    Pages (from-to)1013-1019
    Number of pages7
    JournalIEEE Transactions on Nuclear Science
    Volume50
    Issue number4 II
    DOIs
    Publication statusPublished - 2003 Aug

    Fingerprint

    Cadmium telluride
    cadmium tellurides
    Protons
    Diodes
    Chemical activation
    diodes
    activation
    protons
    Orbits
    Irradiation
    Detectors
    orbits
    Astrophysics
    irradiation
    Cosmic rays
    detectors
    Radioactivity
    low Earth orbits
    radioactivity
    Germanium

    Keywords

    • Activation
    • CdTe
    • Proton
    • Radiation damage

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Nuclear Energy and Engineering

    Cite this

    Murakami, M. M., Kobayashi, Y., Kokubun, M., Takahashi, I., Okada, Y., Kawaharada, M., ... Makishima, K. (2003). Activation properties of schottky CdTe diodes irradiated by 150 MeV protons. IEEE Transactions on Nuclear Science, 50(4 II), 1013-1019. https://doi.org/10.1109/TNS.2003.815120

    Activation properties of schottky CdTe diodes irradiated by 150 MeV protons. / Murakami, Mio M.; Kobayashi, Yoshihito; Kokubun, Motohide; Takahashi, Isao; Okada, Yuu; Kawaharada, Madoka; Nakazawa, Kazuhiro; Watanabe, Shin; Sato, Goro; Kouda, Manabu; Mitani, Takefumi; Takahashi, Tadayuki; Suzuki, Masaya; Tashiro, Makoto; Kawasoe, Satoshi; Nomachi, Masaharu; Makishima, Kazuo.

    In: IEEE Transactions on Nuclear Science, Vol. 50, No. 4 II, 08.2003, p. 1013-1019.

    Research output: Contribution to journalArticle

    Murakami, MM, Kobayashi, Y, Kokubun, M, Takahashi, I, Okada, Y, Kawaharada, M, Nakazawa, K, Watanabe, S, Sato, G, Kouda, M, Mitani, T, Takahashi, T, Suzuki, M, Tashiro, M, Kawasoe, S, Nomachi, M & Makishima, K 2003, 'Activation properties of schottky CdTe diodes irradiated by 150 MeV protons', IEEE Transactions on Nuclear Science, vol. 50, no. 4 II, pp. 1013-1019. https://doi.org/10.1109/TNS.2003.815120
    Murakami MM, Kobayashi Y, Kokubun M, Takahashi I, Okada Y, Kawaharada M et al. Activation properties of schottky CdTe diodes irradiated by 150 MeV protons. IEEE Transactions on Nuclear Science. 2003 Aug;50(4 II):1013-1019. https://doi.org/10.1109/TNS.2003.815120
    Murakami, Mio M. ; Kobayashi, Yoshihito ; Kokubun, Motohide ; Takahashi, Isao ; Okada, Yuu ; Kawaharada, Madoka ; Nakazawa, Kazuhiro ; Watanabe, Shin ; Sato, Goro ; Kouda, Manabu ; Mitani, Takefumi ; Takahashi, Tadayuki ; Suzuki, Masaya ; Tashiro, Makoto ; Kawasoe, Satoshi ; Nomachi, Masaharu ; Makishima, Kazuo. / Activation properties of schottky CdTe diodes irradiated by 150 MeV protons. In: IEEE Transactions on Nuclear Science. 2003 ; Vol. 50, No. 4 II. pp. 1013-1019.
    @article{ef7395cfc01b40a6a260021e7cc9d0c4,
    title = "Activation properties of schottky CdTe diodes irradiated by 150 MeV protons",
    abstract = "Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.",
    keywords = "Activation, CdTe, Proton, Radiation damage",
    author = "Murakami, {Mio M.} and Yoshihito Kobayashi and Motohide Kokubun and Isao Takahashi and Yuu Okada and Madoka Kawaharada and Kazuhiro Nakazawa and Shin Watanabe and Goro Sato and Manabu Kouda and Takefumi Mitani and Tadayuki Takahashi and Masaya Suzuki and Makoto Tashiro and Satoshi Kawasoe and Masaharu Nomachi and Kazuo Makishima",
    year = "2003",
    month = "8",
    doi = "10.1109/TNS.2003.815120",
    language = "English",
    volume = "50",
    pages = "1013--1019",
    journal = "IEEE Transactions on Nuclear Science",
    issn = "0018-9499",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    number = "4 II",

    }

    TY - JOUR

    T1 - Activation properties of schottky CdTe diodes irradiated by 150 MeV protons

    AU - Murakami, Mio M.

    AU - Kobayashi, Yoshihito

    AU - Kokubun, Motohide

    AU - Takahashi, Isao

    AU - Okada, Yuu

    AU - Kawaharada, Madoka

    AU - Nakazawa, Kazuhiro

    AU - Watanabe, Shin

    AU - Sato, Goro

    AU - Kouda, Manabu

    AU - Mitani, Takefumi

    AU - Takahashi, Tadayuki

    AU - Suzuki, Masaya

    AU - Tashiro, Makoto

    AU - Kawasoe, Satoshi

    AU - Nomachi, Masaharu

    AU - Makishima, Kazuo

    PY - 2003/8

    Y1 - 2003/8

    N2 - Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.

    AB - Cadmium Telluride (CdTe), with its high photon absorption efficiency, has been regarded as a promising semiconductor material for the next generation X/γ-ray detectors. In order to apply this device to astrophysics, it is essential to investigate the radiation hardness and background properties induced by cosmic-ray protons in orbit. We irradiated Schottky CdTe diodes and a CdTe block with a beam of mono-energetic (150 MeV) protons. The induced activation in CdTe was measured externally with a germanium detector, and internally with the irradiated CdTe diode itself. We successfully identified most of radioactive isotopes induced mainly via (p, xn) reactions, and confirmed that the activation background level of CdTe diode is sufficiently low in orbit. We compared energy resolution and leakage current before and after the irradiation and also monitored the signals from a calibration source during the irradiation. There have been no significant degradation. CdTe diodes are tolerant enough to radioactivity in low earth orbit.

    KW - Activation

    KW - CdTe

    KW - Proton

    KW - Radiation damage

    UR - http://www.scopus.com/inward/record.url?scp=0041424939&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0041424939&partnerID=8YFLogxK

    U2 - 10.1109/TNS.2003.815120

    DO - 10.1109/TNS.2003.815120

    M3 - Article

    VL - 50

    SP - 1013

    EP - 1019

    JO - IEEE Transactions on Nuclear Science

    JF - IEEE Transactions on Nuclear Science

    SN - 0018-9499

    IS - 4 II

    ER -